Wide-bandgap (AgCu)(InGa)Se2 absorber layers deposited by three-stage co-evaporation

Wide-bandgap (AgCu)(InGa)Se 2 absorber layers with Ga/(In+Ga) = 0.8 were deposited by a three-stage co-evaporation process using varying Se incident flux and stage-one substrate temperature. Films exhibited preferential (204)/(220) orientation and a Ga-deficient notch near the surface, both characte...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hanket, G M, Boyle, J H, Shafarman, W N, Teeter, G
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium Performance evaluation Photonic band gap Photovoltaic cells Substrates X-ray scattering
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!