New process for low sheet and ohmic contact resistance of AIN/GaN MOS-HEMTs

This paper reports a novel method for producing low ohmic contact resistance, R C , as well as low sheet resistance, R sh , on AlN/GaN MOS-HEMT structures. The method relies on the protection of the very sensitive AlN epi-layer from exposure to liquid chemicals during processing using evaporated Al,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Taking, S, Khokhar, A Z, MacFarlane, D, Sharabi, S, Dabiran, A M, Wasige, E
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	AIN/GaN Al 2 O 3 Aluminum oxide Gallium nitride HEMT HEMTs Logic gates MOS-HEMT Ohmic contacts Resistance Semiconductor device measurement thermal oxidation wet etching
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!