Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics

This letter examines the turn-around effect of a threshold voltage (V th ) shift of an n-type transistor with atomic-layer-deposited HfO x N y gate dielectrics under a positive gate bias. V th shifted to the positive voltage direction during the first second due to electron trapping at the preexisti...

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Veröffentlicht in:	IEEE electron device letters 2010-12, Vol.31 (12), p.1479-1481
Hauptverfasser:	Jung, Hyung-Suk, Rha, Sang-Ho, Kim, Hyo Kyeom, Kim, Jeong Hwan, Won, Seok-Jun, Lee, Joohwi, Lee, Sang Young, Hwang, Cheol Seong, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In
Format:	Artikel
Sprache:	eng
Schlagworte:	Dielectrics Electron traps Hafnium oxynitride (\hbox{HfO}_{x}\hbox{N}_{y}) Logic gates metal-oxide-semiconductor field-effect transistor (MOSFET) MOSFET circuits positive bias temperature instability (PBTI) Stress Temperature measurement turn-around
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