Iridium oxide films obtained by thermo-chemical transformation

Films of iridium oxide were deposited by the dipping method from a 0.005M Iridium chloride solution in iso-propanol and post-annealed at different temperatures (350, 450 and 550 °C). After three dippings, very thin films, with effective thickness less than 10 nm were obtained. Their effective refrac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Avila-García, A, Romero-Paredes, G, Peña-Sierra, R
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Dipping method Glass Iridium dioxide Silicon Surface morphology Temperature measurement Textured surface
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