Low power SRAM cell design for FinFET and CNTFET technologies

Implementations of SRAM cells in FinFET and carbon nanotube FET (CNTFET) technologies are presented in this paper. The International Technology Roadmap for Semiconductors has identified these technologies as likely candidates to replace bulk CMOS. Leakage current is one of the major contributors in...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Delgado-Frias, Jose G, Zhe Zhang, Turi, Michael A
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	8T SRAM cell Arrays carbon nanotube FET CNTFETs FinFET Layout leakage current Logic gates Memory management Microprocessors Periodic structures SRAM
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