Statistical experimental design for MBE process characterization

This paper presents a statistically designed experiment for systematic characterization of the molecular beam epitaxy (MBE) process to quantitatively describe the effects of process conditions on the qualities of grown films. This methodology is applied to a five-layer, undoped AlGaAs and InGaAs sin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lee, K.K., Bicknell-Tassius, R., Dagnall, G., Brown, A., May, G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Backpropagation Design for experiments Gallium arsenide Indium gallium arsenide Molecular beam epitaxial growth Neural networks Photoluminescence Substrates Temperature X-ray diffraction
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