Ultra-low on-resistance trench gate MOSFET with buried p-island

A high voltage trench gate MOSFET (TMOS) with an ultra-low specific on-resistance (R on ) is proposed. The MOSFET is characterized by the combination of a trench gate and two buried p-islands (BPIs) formed in the n-epitaxial layer by the self-alignment (BPIs TMOS). In the blocking state, the superju...

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Bibliographische Detailangaben

Hauptverfasser:	Xiaorong Luo, Daping Fu, Huanmei Gao, Xi Chen
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	MOSFET circuits
Online-Zugang:	Volltext bestellen
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