A High-Performance n-i-p SiCN Homojunction for Low-Cost and High-Temperature Ultraviolet Detecting Applications

In this paper, ultraviolet (UV) detecting performances of the n-i-p SiCN homojunction prepared on a p-type (100) silicon substrate under room and elevated temperatures were studied. We analyze the morphology and structure of the crystalline SiCN film on Si first and then examine responses of the sen...

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