Thermal characterization of surface-micromachined silicon nitride membranes for thermal infrared detectors
The aim of this work is to provide a thorough thermal characterization of membrane structures intended for thermal infrared detector arrays. The fabrication has been conducted at temperatures below 400/spl deg/C to allow future post processing onto existing CMOS readout circuitry. Our choices of mem...
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| Veröffentlicht in: | Journal of microelectromechanical systems 1997-03, Vol.6 (1), p.55-61 |
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| creator | Eriksson, P. Andersson, J.Y. Stemme, G. |
| description | The aim of this work is to provide a thorough thermal characterization of membrane structures intended for thermal infrared detector arrays. The fabrication has been conducted at temperatures below 400/spl deg/C to allow future post processing onto existing CMOS readout circuitry. Our choices of membrane material and processing technique were plasma enhanced chemical vapor deposited silicon nitride (SiN) and surface micromachining, respectively. The characterization gave for the thermal conductance (G) and thermal mass between the membrane and its surroundings 1.8/spl middot/10/sup -7/ W/K and 1.7/spl middot/10/sup -9/ J/K, respectively, which are close to the best reported values elsewhere. From these results the thermal conductivity and specific heat of SiN were extracted as 4.5/spl plusmn/0.7 W/m.K and 1500/spl plusmn/230 J/kg.K. The contribution to G from different heat transfer mechanisms are estimated. A model describing the pressure dependence of G was developed and verified experimentally in the pressure interval [5/spl middot/10/sup -3/, 1000] mbar. Finally, the influence of the thermal properties of the membrane on infrared detector performance is discussed. |
| doi_str_mv | 10.1109/84.557531 |
| format | Article |
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The fabrication has been conducted at temperatures below 400/spl deg/C to allow future post processing onto existing CMOS readout circuitry. Our choices of membrane material and processing technique were plasma enhanced chemical vapor deposited silicon nitride (SiN) and surface micromachining, respectively. The characterization gave for the thermal conductance (G) and thermal mass between the membrane and its surroundings 1.8/spl middot/10/sup -7/ W/K and 1.7/spl middot/10/sup -9/ J/K, respectively, which are close to the best reported values elsewhere. From these results the thermal conductivity and specific heat of SiN were extracted as 4.5/spl plusmn/0.7 W/m.K and 1500/spl plusmn/230 J/kg.K. The contribution to G from different heat transfer mechanisms are estimated. A model describing the pressure dependence of G was developed and verified experimentally in the pressure interval [5/spl middot/10/sup -3/, 1000] mbar. Finally, the influence of the thermal properties of the membrane on infrared detector performance is discussed.</description><identifier>ISSN: 1057-7157</identifier><identifier>EISSN: 1941-0158</identifier><identifier>DOI: 10.1109/84.557531</identifier><identifier>CODEN: JMIYET</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Biomembranes ; Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors ; Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors ; Circuits ; CMOS process ; Conducting materials ; Exact sciences and technology ; Fabrication ; Infrared detectors ; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Physics ; Plasma temperature ; Sensor arrays ; Silicon compounds ; Thermal conductivity ; Thermal instruments, apparatus and techniques</subject><ispartof>Journal of microelectromechanical systems, 1997-03, Vol.6 (1), p.55-61</ispartof><rights>1997 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-9eb3683cb6c940ba097e76ccee1fe6b8bcfcdfd293fe5eea6a2e5a993e553773</citedby><cites>FETCH-LOGICAL-c337t-9eb3683cb6c940ba097e76ccee1fe6b8bcfcdfd293fe5eea6a2e5a993e553773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/557531$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/557531$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2616695$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Eriksson, P.</creatorcontrib><creatorcontrib>Andersson, J.Y.</creatorcontrib><creatorcontrib>Stemme, G.</creatorcontrib><title>Thermal characterization of surface-micromachined silicon nitride membranes for thermal infrared detectors</title><title>Journal of microelectromechanical systems</title><addtitle>JMEMS</addtitle><description>The aim of this work is to provide a thorough thermal characterization of membrane structures intended for thermal infrared detector arrays. The fabrication has been conducted at temperatures below 400/spl deg/C to allow future post processing onto existing CMOS readout circuitry. Our choices of membrane material and processing technique were plasma enhanced chemical vapor deposited silicon nitride (SiN) and surface micromachining, respectively. The characterization gave for the thermal conductance (G) and thermal mass between the membrane and its surroundings 1.8/spl middot/10/sup -7/ W/K and 1.7/spl middot/10/sup -9/ J/K, respectively, which are close to the best reported values elsewhere. From these results the thermal conductivity and specific heat of SiN were extracted as 4.5/spl plusmn/0.7 W/m.K and 1500/spl plusmn/230 J/kg.K. The contribution to G from different heat transfer mechanisms are estimated. A model describing the pressure dependence of G was developed and verified experimentally in the pressure interval [5/spl middot/10/sup -3/, 1000] mbar. Finally, the influence of the thermal properties of the membrane on infrared detector performance is discussed.</description><subject>Biomembranes</subject><subject>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</subject><subject>Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors</subject><subject>Circuits</subject><subject>CMOS process</subject><subject>Conducting materials</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Infrared detectors</subject><subject>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Physics</subject><subject>Plasma temperature</subject><subject>Sensor arrays</subject><subject>Silicon compounds</subject><subject>Thermal conductivity</subject><subject>Thermal instruments, apparatus and techniques</subject><issn>1057-7157</issn><issn>1941-0158</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqNkD1PwzAQQC0EEqUwsDJlQEgMKXYc2_GIKr6kSizdI-dyVl3lo9juAL8eo0SdmXyS3z2dHiG3jK4Yo_qpKldCKMHZGVkwXbKcMlGdp5kKlSsm1CW5CmFPKSvLSi7IfrtD35sug53xBiJ692OiG4dstFk4emsA896BH3sDOzdgmwXXOUjA4KJ3LWY99o03A4bMjj6Ls88N1huf8BYjQhx9uCYX1nQBb-Z3SbavL9v1e775fPtYP29y4FzFXGPDZcWhkaBL2hiqFSoJgMgsyqZqwEJr20JziwLRSFOgMFpzFIIrxZfkYdIe_Ph1xBDr3gXArksnjsdQF5XSmun_gFIpVrIEPk5gqhCCR1sfvOuN_64Zrf-q11VZT9UTez9LTQDTpQYDuHBaKCSTUouE3U2YQ8TT7-z4BYhdjPk</recordid><startdate>19970301</startdate><enddate>19970301</enddate><creator>Eriksson, P.</creator><creator>Andersson, J.Y.</creator><creator>Stemme, G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>19970301</creationdate><title>Thermal characterization of surface-micromachined silicon nitride membranes for thermal infrared detectors</title><author>Eriksson, P. ; Andersson, J.Y. ; Stemme, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-9eb3683cb6c940ba097e76ccee1fe6b8bcfcdfd293fe5eea6a2e5a993e553773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Biomembranes</topic><topic>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</topic><topic>Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors</topic><topic>Circuits</topic><topic>CMOS process</topic><topic>Conducting materials</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Infrared detectors</topic><topic>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Physics</topic><topic>Plasma temperature</topic><topic>Sensor arrays</topic><topic>Silicon compounds</topic><topic>Thermal conductivity</topic><topic>Thermal instruments, apparatus and techniques</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Eriksson, P.</creatorcontrib><creatorcontrib>Andersson, J.Y.</creatorcontrib><creatorcontrib>Stemme, G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>Journal of microelectromechanical systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Eriksson, P.</au><au>Andersson, J.Y.</au><au>Stemme, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal characterization of surface-micromachined silicon nitride membranes for thermal infrared detectors</atitle><jtitle>Journal of microelectromechanical systems</jtitle><stitle>JMEMS</stitle><date>1997-03-01</date><risdate>1997</risdate><volume>6</volume><issue>1</issue><spage>55</spage><epage>61</epage><pages>55-61</pages><issn>1057-7157</issn><eissn>1941-0158</eissn><coden>JMIYET</coden><abstract>The aim of this work is to provide a thorough thermal characterization of membrane structures intended for thermal infrared detector arrays. The fabrication has been conducted at temperatures below 400/spl deg/C to allow future post processing onto existing CMOS readout circuitry. Our choices of membrane material and processing technique were plasma enhanced chemical vapor deposited silicon nitride (SiN) and surface micromachining, respectively. The characterization gave for the thermal conductance (G) and thermal mass between the membrane and its surroundings 1.8/spl middot/10/sup -7/ W/K and 1.7/spl middot/10/sup -9/ J/K, respectively, which are close to the best reported values elsewhere. From these results the thermal conductivity and specific heat of SiN were extracted as 4.5/spl plusmn/0.7 W/m.K and 1500/spl plusmn/230 J/kg.K. The contribution to G from different heat transfer mechanisms are estimated. A model describing the pressure dependence of G was developed and verified experimentally in the pressure interval [5/spl middot/10/sup -3/, 1000] mbar. Finally, the influence of the thermal properties of the membrane on infrared detector performance is discussed.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/84.557531</doi><tpages>7</tpages></addata></record> |
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| subjects | Biomembranes Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Bolometers infrared, submillimeter wave, microwave, and radiowave receivers and detectors Circuits CMOS process Conducting materials Exact sciences and technology Fabrication Infrared detectors Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Physics Plasma temperature Sensor arrays Silicon compounds Thermal conductivity Thermal instruments, apparatus and techniques |
| title | Thermal characterization of surface-micromachined silicon nitride membranes for thermal infrared detectors |
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