Iddq test: sensitivity analysis of scaling

While technology is changing the face of the world, it itself is changing by leaps and bounds; there is a continuing trend to put more functionality on the same piece of silicon. Without major changes in the CMOS technology, it has been shown that the scaling of devices has significant impact on the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Williams, T.W., Dennard, R.H., Kapur, R., Mercer, M.R., Maly, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 792
container_issue
container_start_page 786
container_title
container_volume
creator Williams, T.W.
Dennard, R.H.
Kapur, R.
Mercer, M.R.
Maly, M.
description While technology is changing the face of the world, it itself is changing by leaps and bounds; there is a continuing trend to put more functionality on the same piece of silicon. Without major changes in the CMOS technology, it has been shown that the scaling of devices has significant impact on the effectiveness of Iddq testing. The sensitivity of Iddq testing to individual device parameters is studied. It is explained how Iddq testing becomes increasingly ineffective in the scaled product with respect to most parameters and can be improved with others.
doi_str_mv 10.1109/TEST.1996.557138
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_557138</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>557138</ieee_id><sourcerecordid>557138</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-7c301c7f76f63c0580ea0d080c46ec55cb5c824ae6d5532c256ec9c13bc808453</originalsourceid><addsrcrecordid>eNotj01LAzEURYMf4LR2L66yFmb6kjdvkriTUrVQcOG4LumbjETGUZsgzL-3UOHCgbM4cIW4UVApBW7Zrl_bSjnXVERGoT0ThUZjS60JzsXCGQvHIVKtzIUoFFhXIqG7ErOUPgA0kIZC3G267kfmkPK9TGFMMcffmCfpRz9MKSb51cvEfojj-7W47P2QwuKfc_H2uG5Xz-X25WmzetiWURmdS8MIik1vmr5BBrIQPHRggesmMBHvia2ufWg6ItSs6agdK9yzBVsTzsXtqRtDCLvvQ_z0h2l3eol_Q6VCtg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Iddq test: sensitivity analysis of scaling</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Williams, T.W. ; Dennard, R.H. ; Kapur, R. ; Mercer, M.R. ; Maly, M.</creator><creatorcontrib>Williams, T.W. ; Dennard, R.H. ; Kapur, R. ; Mercer, M.R. ; Maly, M.</creatorcontrib><description>While technology is changing the face of the world, it itself is changing by leaps and bounds; there is a continuing trend to put more functionality on the same piece of silicon. Without major changes in the CMOS technology, it has been shown that the scaling of devices has significant impact on the effectiveness of Iddq testing. The sensitivity of Iddq testing to individual device parameters is studied. It is explained how Iddq testing becomes increasingly ineffective in the scaled product with respect to most parameters and can be improved with others.</description><identifier>ISSN: 1089-3539</identifier><identifier>ISBN: 9780780335417</identifier><identifier>ISBN: 0780335414</identifier><identifier>EISSN: 2378-2250</identifier><identifier>DOI: 10.1109/TEST.1996.557138</identifier><language>eng</language><publisher>IEEE</publisher><subject>CMOS technology ; Doping ; Geometry ; Leakage current ; Monitoring ; Pulp manufacturing ; Sensitivity analysis ; Silicon ; Testing ; Voltage</subject><ispartof>Proceedings International Test Conference 1996. Test and Design Validity, 1996, p.786-792</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/557138$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/557138$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Williams, T.W.</creatorcontrib><creatorcontrib>Dennard, R.H.</creatorcontrib><creatorcontrib>Kapur, R.</creatorcontrib><creatorcontrib>Mercer, M.R.</creatorcontrib><creatorcontrib>Maly, M.</creatorcontrib><title>Iddq test: sensitivity analysis of scaling</title><title>Proceedings International Test Conference 1996. Test and Design Validity</title><addtitle>TEST</addtitle><description>While technology is changing the face of the world, it itself is changing by leaps and bounds; there is a continuing trend to put more functionality on the same piece of silicon. Without major changes in the CMOS technology, it has been shown that the scaling of devices has significant impact on the effectiveness of Iddq testing. The sensitivity of Iddq testing to individual device parameters is studied. It is explained how Iddq testing becomes increasingly ineffective in the scaled product with respect to most parameters and can be improved with others.</description><subject>CMOS technology</subject><subject>Doping</subject><subject>Geometry</subject><subject>Leakage current</subject><subject>Monitoring</subject><subject>Pulp manufacturing</subject><subject>Sensitivity analysis</subject><subject>Silicon</subject><subject>Testing</subject><subject>Voltage</subject><issn>1089-3539</issn><issn>2378-2250</issn><isbn>9780780335417</isbn><isbn>0780335414</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj01LAzEURYMf4LR2L66yFmb6kjdvkriTUrVQcOG4LumbjETGUZsgzL-3UOHCgbM4cIW4UVApBW7Zrl_bSjnXVERGoT0ThUZjS60JzsXCGQvHIVKtzIUoFFhXIqG7ErOUPgA0kIZC3G267kfmkPK9TGFMMcffmCfpRz9MKSb51cvEfojj-7W47P2QwuKfc_H2uG5Xz-X25WmzetiWURmdS8MIik1vmr5BBrIQPHRggesmMBHvia2ufWg6ItSs6agdK9yzBVsTzsXtqRtDCLvvQ_z0h2l3eol_Q6VCtg</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Williams, T.W.</creator><creator>Dennard, R.H.</creator><creator>Kapur, R.</creator><creator>Mercer, M.R.</creator><creator>Maly, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Iddq test: sensitivity analysis of scaling</title><author>Williams, T.W. ; Dennard, R.H. ; Kapur, R. ; Mercer, M.R. ; Maly, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-7c301c7f76f63c0580ea0d080c46ec55cb5c824ae6d5532c256ec9c13bc808453</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>CMOS technology</topic><topic>Doping</topic><topic>Geometry</topic><topic>Leakage current</topic><topic>Monitoring</topic><topic>Pulp manufacturing</topic><topic>Sensitivity analysis</topic><topic>Silicon</topic><topic>Testing</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Williams, T.W.</creatorcontrib><creatorcontrib>Dennard, R.H.</creatorcontrib><creatorcontrib>Kapur, R.</creatorcontrib><creatorcontrib>Mercer, M.R.</creatorcontrib><creatorcontrib>Maly, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Williams, T.W.</au><au>Dennard, R.H.</au><au>Kapur, R.</au><au>Mercer, M.R.</au><au>Maly, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Iddq test: sensitivity analysis of scaling</atitle><btitle>Proceedings International Test Conference 1996. Test and Design Validity</btitle><stitle>TEST</stitle><date>1996</date><risdate>1996</risdate><spage>786</spage><epage>792</epage><pages>786-792</pages><issn>1089-3539</issn><eissn>2378-2250</eissn><isbn>9780780335417</isbn><isbn>0780335414</isbn><abstract>While technology is changing the face of the world, it itself is changing by leaps and bounds; there is a continuing trend to put more functionality on the same piece of silicon. Without major changes in the CMOS technology, it has been shown that the scaling of devices has significant impact on the effectiveness of Iddq testing. The sensitivity of Iddq testing to individual device parameters is studied. It is explained how Iddq testing becomes increasingly ineffective in the scaled product with respect to most parameters and can be improved with others.</abstract><pub>IEEE</pub><doi>10.1109/TEST.1996.557138</doi><tpages>7</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1089-3539
ispartof Proceedings International Test Conference 1996. Test and Design Validity, 1996, p.786-792
issn 1089-3539
2378-2250
language eng
recordid cdi_ieee_primary_557138
source IEEE Electronic Library (IEL) Conference Proceedings
subjects CMOS technology
Doping
Geometry
Leakage current
Monitoring
Pulp manufacturing
Sensitivity analysis
Silicon
Testing
Voltage
title Iddq test: sensitivity analysis of scaling
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T19%3A06%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Iddq%20test:%20sensitivity%20analysis%20of%20scaling&rft.btitle=Proceedings%20International%20Test%20Conference%201996.%20Test%20and%20Design%20Validity&rft.au=Williams,%20T.W.&rft.date=1996&rft.spage=786&rft.epage=792&rft.pages=786-792&rft.issn=1089-3539&rft.eissn=2378-2250&rft.isbn=9780780335417&rft.isbn_list=0780335414&rft_id=info:doi/10.1109/TEST.1996.557138&rft_dat=%3Cieee_6IE%3E557138%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=557138&rfr_iscdi=true