Effects of method for formation of first monolayers on strain state of GaAs films on vicinal Si(001) Substrate

The significant dependence of strain state of lattice of GaAs films grown by molecular-beam epytaxy technique (MBE) on the nucleation method of the first layers of GaP buffer (50 nm) on vicinal substrate Si(001) 4° round was revealed. GaP growth started layer-by-layer with gallium or phosphorus sublayer. In the case of GaP nucleating with gallium, GaAs film has significant lattice rotation round . When buffer starts forming with phosphorus layer GaAs film is evident to rotate round . Film relaxation degree exceeds 100%, it is in the lateral strained state. The analysis was carried out using the triclinic distortion model. The reciprocal scattering map obtained using X-ray diffraction in the three-axis small enabling circuit is presented. The map evidently shows that GaAs film lattice is rotated.