Nanoscale Si/SiO2 double-barrier structures produced by plasma-chemical technology

Si\SiO 2 double-barrier structures with ultrathin nanoscale layers were developed by using α-Si:H thin film depositions and subsequently plasma enhanced oxidation. The experimental equipment with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The electrical pr...

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Hauptverfasser:	Gismatulin, A A, Kamaev, G N, Antonenko, A K, Arzhannikova, S A, Efremov, M D, Gileva, A S
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	capacitance-voltage characteristics current-voltage characteristics Dielectrics double-barrier structure effect of resonant tunneling Lead Magnetic tunneling Nanoscale Si-SiO 2 layers Nanostructures Plasma measurements Plasmas
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creator	Gismatulin, A A Kamaev, G N Antonenko, A K Arzhannikova, S A Efremov, M D Gileva, A S
description	Si\SiO 2 double-barrier structures with ultrathin nanoscale layers were developed by using α-Si:H thin film depositions and subsequently plasma enhanced oxidation. The experimental equipment with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The electrical properties of the manufactured MOS-structures were investigated through measurement of C-V and I-V characteristics. In the experiments we observed the charge effects related to the process of carrier transport through thin dielectric. Furthermore, the areas of differential negative resistance in I-V characteristics were detected. These structures can be used as resonant tunneling diodes.
doi_str_mv	10.1109/EDM.2010.5568651
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subjects	capacitance-voltage characteristics current-voltage characteristics Dielectrics double-barrier structure effect of resonant tunneling Lead Magnetic tunneling Nanoscale Si-SiO 2 layers Nanostructures Plasma measurements Plasmas
title	Nanoscale Si/SiO2 double-barrier structures produced by plasma-chemical technology
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