9.4: The effect of ballast resistor and field screening on electron emission of nano-diamond emitters fabricated on micropatterned silicon pillar arrays
This paper describes the influence of ballast resistor and field screening on the electron field emission behavior of nano-diamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 × 50 silicon pillars with different ballast resistances, pillar separations, capped with nano-d...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 194 |
|---|---|
| container_issue | |
| container_start_page | 193 |
| container_title | |
| container_volume | |
| creator | Ghosh, N Weng Poo Kang Raina, S Davidson, J |
| description | This paper describes the influence of ballast resistor and field screening on the electron field emission behavior of nano-diamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 × 50 silicon pillars with different ballast resistances, pillar separations, capped with nano-diamond, have been fabricated on different silicon substrates as cathode for field emission testing. The goal of this study is to evaluate the fabrication method and electron emission characteristics in this configuration for field emission applications. The electron field emission results have been compared to observe the effect of the ballast resistive behavior and array spacing of micropatterned silicon pillars on the nano-diamond field emission behaviors. |
| doi_str_mv | 10.1109/IVNC.2010.5563190 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5563190</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5563190</ieee_id><sourcerecordid>5563190</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-d98b3eadf5194fed8830c3ea3e981d6cc819ed7e611303ce156e3a80ce2d90b23</originalsourceid><addsrcrecordid>eNo1UElOAzEQNAIkQsgDEBd_YIK3mbG5oYglUgSXiGvksdvQaJbI9iU_4bk4IvSla1F1SU3ILWdLzpm5X3-8rZaCFVrXjeSGnZGFaTVXQqlWa83OyfU_MfqCzARvVCVky67IIqVvVkbVouXtjPyYpXqg2y-gEAK4TKdAO9v3NmUaIWHKU6R29DQg9J4mFwFGHD_pNFLoSyAewYApYQElPNpxqjzaYSqhYuQMMdFgu4jOZvDH4IAuTnt7tMaiJOzRFXmPpbe0xWgP6YZcBtsnWJz2nGyfn7ar12rz_rJePW4qNCxX3uhOgvWh5kYF8FpL5oogwWjuG-c0N-BbaDiXTDrgdQPSauZAeMM6Iefk7u8sAsBuH3Gw8bA7_VX-AsTbbVQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>9.4: The effect of ballast resistor and field screening on electron emission of nano-diamond emitters fabricated on micropatterned silicon pillar arrays</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ghosh, N ; Weng Poo Kang ; Raina, S ; Davidson, J</creator><creatorcontrib>Ghosh, N ; Weng Poo Kang ; Raina, S ; Davidson, J</creatorcontrib><description>This paper describes the influence of ballast resistor and field screening on the electron field emission behavior of nano-diamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 × 50 silicon pillars with different ballast resistances, pillar separations, capped with nano-diamond, have been fabricated on different silicon substrates as cathode for field emission testing. The goal of this study is to evaluate the fabrication method and electron emission characteristics in this configuration for field emission applications. The electron field emission results have been compared to observe the effect of the ballast resistive behavior and array spacing of micropatterned silicon pillars on the nano-diamond field emission behaviors.</description><identifier>ISSN: 2164-2370</identifier><identifier>ISBN: 1424478898</identifier><identifier>ISBN: 9781424478897</identifier><identifier>EISBN: 9781424478880</identifier><identifier>EISBN: 142447888X</identifier><identifier>DOI: 10.1109/IVNC.2010.5563190</identifier><language>eng</language><publisher>IEEE</publisher><subject>ballast resistor ; deep reactive ion etching ; Diamond-like carbon ; Electric fields ; Electronic ballasts ; Fabrication ; field emission ; field screening ; Nanostructures ; ridge-structured nano-diamond ; Silicon ; silicon pillar array ; Substrates</subject><ispartof>International Vacuum Nanoelectronics Conference, 2010, p.193-194</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5563190$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,27930,54925</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5563190$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ghosh, N</creatorcontrib><creatorcontrib>Weng Poo Kang</creatorcontrib><creatorcontrib>Raina, S</creatorcontrib><creatorcontrib>Davidson, J</creatorcontrib><title>9.4: The effect of ballast resistor and field screening on electron emission of nano-diamond emitters fabricated on micropatterned silicon pillar arrays</title><title>International Vacuum Nanoelectronics Conference</title><addtitle>IVNC</addtitle><description>This paper describes the influence of ballast resistor and field screening on the electron field emission behavior of nano-diamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 × 50 silicon pillars with different ballast resistances, pillar separations, capped with nano-diamond, have been fabricated on different silicon substrates as cathode for field emission testing. The goal of this study is to evaluate the fabrication method and electron emission characteristics in this configuration for field emission applications. The electron field emission results have been compared to observe the effect of the ballast resistive behavior and array spacing of micropatterned silicon pillars on the nano-diamond field emission behaviors.</description><subject>ballast resistor</subject><subject>deep reactive ion etching</subject><subject>Diamond-like carbon</subject><subject>Electric fields</subject><subject>Electronic ballasts</subject><subject>Fabrication</subject><subject>field emission</subject><subject>field screening</subject><subject>Nanostructures</subject><subject>ridge-structured nano-diamond</subject><subject>Silicon</subject><subject>silicon pillar array</subject><subject>Substrates</subject><issn>2164-2370</issn><isbn>1424478898</isbn><isbn>9781424478897</isbn><isbn>9781424478880</isbn><isbn>142447888X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1UElOAzEQNAIkQsgDEBd_YIK3mbG5oYglUgSXiGvksdvQaJbI9iU_4bk4IvSla1F1SU3ILWdLzpm5X3-8rZaCFVrXjeSGnZGFaTVXQqlWa83OyfU_MfqCzARvVCVky67IIqVvVkbVouXtjPyYpXqg2y-gEAK4TKdAO9v3NmUaIWHKU6R29DQg9J4mFwFGHD_pNFLoSyAewYApYQElPNpxqjzaYSqhYuQMMdFgu4jOZvDH4IAuTnt7tMaiJOzRFXmPpbe0xWgP6YZcBtsnWJz2nGyfn7ar12rz_rJePW4qNCxX3uhOgvWh5kYF8FpL5oogwWjuG-c0N-BbaDiXTDrgdQPSauZAeMM6Iefk7u8sAsBuH3Gw8bA7_VX-AsTbbVQ</recordid><startdate>201007</startdate><enddate>201007</enddate><creator>Ghosh, N</creator><creator>Weng Poo Kang</creator><creator>Raina, S</creator><creator>Davidson, J</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201007</creationdate><title>9.4: The effect of ballast resistor and field screening on electron emission of nano-diamond emitters fabricated on micropatterned silicon pillar arrays</title><author>Ghosh, N ; Weng Poo Kang ; Raina, S ; Davidson, J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-d98b3eadf5194fed8830c3ea3e981d6cc819ed7e611303ce156e3a80ce2d90b23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ballast resistor</topic><topic>deep reactive ion etching</topic><topic>Diamond-like carbon</topic><topic>Electric fields</topic><topic>Electronic ballasts</topic><topic>Fabrication</topic><topic>field emission</topic><topic>field screening</topic><topic>Nanostructures</topic><topic>ridge-structured nano-diamond</topic><topic>Silicon</topic><topic>silicon pillar array</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Ghosh, N</creatorcontrib><creatorcontrib>Weng Poo Kang</creatorcontrib><creatorcontrib>Raina, S</creatorcontrib><creatorcontrib>Davidson, J</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ghosh, N</au><au>Weng Poo Kang</au><au>Raina, S</au><au>Davidson, J</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>9.4: The effect of ballast resistor and field screening on electron emission of nano-diamond emitters fabricated on micropatterned silicon pillar arrays</atitle><btitle>International Vacuum Nanoelectronics Conference</btitle><stitle>IVNC</stitle><date>2010-07</date><risdate>2010</risdate><spage>193</spage><epage>194</epage><pages>193-194</pages><issn>2164-2370</issn><isbn>1424478898</isbn><isbn>9781424478897</isbn><eisbn>9781424478880</eisbn><eisbn>142447888X</eisbn><abstract>This paper describes the influence of ballast resistor and field screening on the electron field emission behavior of nano-diamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 × 50 silicon pillars with different ballast resistances, pillar separations, capped with nano-diamond, have been fabricated on different silicon substrates as cathode for field emission testing. The goal of this study is to evaluate the fabrication method and electron emission characteristics in this configuration for field emission applications. The electron field emission results have been compared to observe the effect of the ballast resistive behavior and array spacing of micropatterned silicon pillars on the nano-diamond field emission behaviors.</abstract><pub>IEEE</pub><doi>10.1109/IVNC.2010.5563190</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2164-2370 |
| ispartof | International Vacuum Nanoelectronics Conference, 2010, p.193-194 |
| issn | 2164-2370 |
| language | eng |
| recordid | cdi_ieee_primary_5563190 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | ballast resistor deep reactive ion etching Diamond-like carbon Electric fields Electronic ballasts Fabrication field emission field screening Nanostructures ridge-structured nano-diamond Silicon silicon pillar array Substrates |
| title | 9.4: The effect of ballast resistor and field screening on electron emission of nano-diamond emitters fabricated on micropatterned silicon pillar arrays |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T13%3A33%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=9.4:%20The%20effect%20of%20ballast%20resistor%20and%20field%20screening%20on%20electron%20emission%20of%20nano-diamond%20emitters%20fabricated%20on%20micropatterned%20silicon%20pillar%20arrays&rft.btitle=International%20Vacuum%20Nanoelectronics%20Conference&rft.au=Ghosh,%20N&rft.date=2010-07&rft.spage=193&rft.epage=194&rft.pages=193-194&rft.issn=2164-2370&rft.isbn=1424478898&rft.isbn_list=9781424478897&rft_id=info:doi/10.1109/IVNC.2010.5563190&rft_dat=%3Cieee_6IE%3E5563190%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424478880&rft.eisbn_list=142447888X&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5563190&rfr_iscdi=true |