Enhanced hole mobility in non-(001) oriented sidewall corner of Si pMOSFETs formed on (001) substrate

By means of the TEM images, the channel width of (001) silicon pMOSFETs is separated into the flat and rounded corner parts. The underlying stress distribution is obtained via a process simulation. Then, a systematic analysis of the measured drain current leads to a remarkable result: The hole mobil...

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Bibliographische Detailangaben

Hauptverfasser:	Chih-Yu Hsu, Hua-Gang Chang, Shin-Jiun Kuang, Wei-Han Lee, Yu-Cheng Chen, Chien-Chih Lee, Ming-Jer Chen
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Current density Logic gates MOSFETs Silicon Stress Substrates
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