Thickness control by ion beam milling in acoustic resonator devices
In this paper, practical aspects of production worthy methods for film uniformity adjustment (trimming) used in manufacturing of Film Bulk Acoustic Resonator (FBAR) filters have been presented. Two-step trimming in conjunction with thickness "smoothing" technique control total thickness ra...
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creator | Mishin, Sergey Oshmyansky, Yury Bi, Frank |
description | In this paper, practical aspects of production worthy methods for film uniformity adjustment (trimming) used in manufacturing of Film Bulk Acoustic Resonator (FBAR) filters have been presented. Two-step trimming in conjunction with thickness "smoothing" technique control total thickness range to within less than 8 A on product wafers with variable surface film etch rates even with difficult to measure film thickness. Trimming processes were used to allow using one wafer from a batch to provide compensation feedback in the FBAR devices. Combining ion mill with deposition in the same tool produces |
doi_str_mv | 10.1109/FREQ.2010.5556249 |
format | Conference Proceeding |
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Two-step trimming in conjunction with thickness "smoothing" technique control total thickness range to within less than 8 A on product wafers with variable surface film etch rates even with difficult to measure film thickness. Trimming processes were used to allow using one wafer from a batch to provide compensation feedback in the FBAR devices. Combining ion mill with deposition in the same tool produces <;0.1% uniformity in the deposited films.</description><identifier>ISSN: 2327-1914</identifier><identifier>ISBN: 1424463998</identifier><identifier>ISBN: 9781424463992</identifier><identifier>EISBN: 9781424464012</identifier><identifier>EISBN: 1424464005</identifier><identifier>EISBN: 1424464013</identifier><identifier>EISBN: 9781424464005</identifier><identifier>DOI: 10.1109/FREQ.2010.5556249</identifier><identifier>LCCN: 87-654207</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Film bulk acoustic resonators ; Ion beams ; Ion sources ; Surface treatment</subject><ispartof>2010 IEEE International Frequency Control Symposium, 2010, p.642-645</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5556249$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54899</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5556249$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mishin, Sergey</creatorcontrib><creatorcontrib>Oshmyansky, Yury</creatorcontrib><creatorcontrib>Bi, Frank</creatorcontrib><title>Thickness control by ion beam milling in acoustic resonator devices</title><title>2010 IEEE International Frequency Control Symposium</title><addtitle>FREQ</addtitle><description>In this paper, practical aspects of production worthy methods for film uniformity adjustment (trimming) used in manufacturing of Film Bulk Acoustic Resonator (FBAR) filters have been presented. Two-step trimming in conjunction with thickness "smoothing" technique control total thickness range to within less than 8 A on product wafers with variable surface film etch rates even with difficult to measure film thickness. Trimming processes were used to allow using one wafer from a batch to provide compensation feedback in the FBAR devices. Combining ion mill with deposition in the same tool produces <;0.1% uniformity in the deposited films.</description><subject>Aluminum</subject><subject>Film bulk acoustic resonators</subject><subject>Ion beams</subject><subject>Ion sources</subject><subject>Surface treatment</subject><issn>2327-1914</issn><isbn>1424463998</isbn><isbn>9781424463992</isbn><isbn>9781424464012</isbn><isbn>1424464005</isbn><isbn>1424464013</isbn><isbn>9781424464005</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMFKAzEUACNasNb9APGSH9j6kk02eUcprQoFUeq5ZF9fNLrdlc0q9O8V2tMwlzmMEDcK5koB3q1ely9zDf9qra21wTNRoPPKaGNqA0qfi6ujVIj-Qkx1pV2pUJmJmHpX1tZocJeiyPkTABQi1tZOxWLzkeir45wl9d049K1sDjL1nWw47OU-tW3q3mXqZKD-J4-J5MC578LYD3LHv4k4X4tJDG3m4sSZeFstN4vHcv388LS4X5dJOTuWTYiRDLvgCGtPHMnVuomgNXjEitBgDMaQixzAV-QUYwC1sxB8oIaqmbg9dhMzb7-HtA_DYXv6Uf0BnrFQqA</recordid><startdate>201006</startdate><enddate>201006</enddate><creator>Mishin, Sergey</creator><creator>Oshmyansky, Yury</creator><creator>Bi, Frank</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201006</creationdate><title>Thickness control by ion beam milling in acoustic resonator devices</title><author>Mishin, Sergey ; Oshmyansky, Yury ; Bi, Frank</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-baffc4e7a7c968cefc762bf02208993c949fa44c7fea083c71e9a01d50a8acbc3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Aluminum</topic><topic>Film bulk acoustic resonators</topic><topic>Ion beams</topic><topic>Ion sources</topic><topic>Surface treatment</topic><toplevel>online_resources</toplevel><creatorcontrib>Mishin, Sergey</creatorcontrib><creatorcontrib>Oshmyansky, Yury</creatorcontrib><creatorcontrib>Bi, Frank</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mishin, Sergey</au><au>Oshmyansky, Yury</au><au>Bi, Frank</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Thickness control by ion beam milling in acoustic resonator devices</atitle><btitle>2010 IEEE International Frequency Control Symposium</btitle><stitle>FREQ</stitle><date>2010-06</date><risdate>2010</risdate><spage>642</spage><epage>645</epage><pages>642-645</pages><issn>2327-1914</issn><isbn>1424463998</isbn><isbn>9781424463992</isbn><eisbn>9781424464012</eisbn><eisbn>1424464005</eisbn><eisbn>1424464013</eisbn><eisbn>9781424464005</eisbn><abstract>In this paper, practical aspects of production worthy methods for film uniformity adjustment (trimming) used in manufacturing of Film Bulk Acoustic Resonator (FBAR) filters have been presented. Two-step trimming in conjunction with thickness "smoothing" technique control total thickness range to within less than 8 A on product wafers with variable surface film etch rates even with difficult to measure film thickness. Trimming processes were used to allow using one wafer from a batch to provide compensation feedback in the FBAR devices. Combining ion mill with deposition in the same tool produces <;0.1% uniformity in the deposited films.</abstract><pub>IEEE</pub><doi>10.1109/FREQ.2010.5556249</doi><tpages>4</tpages></addata></record> |
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language | eng |
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subjects | Aluminum Film bulk acoustic resonators Ion beams Ion sources Surface treatment |
title | Thickness control by ion beam milling in acoustic resonator devices |
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