A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device

An 8-layer, 75 nm half-pitch, 3D stacked vertical-gate (VG) TFT BE-SONOS NAND Flash array is fabricated and characterized. We propose a buried-channel (n-type well) device to improve the read current of TFT NAND, and it also allows the junction-free structure which is particularly important for 3D s...

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Hauptverfasser:	Hang-Ting Lue, Tzu-Hsuan Hsu, Yi-Hsuan Hsiao, Hong, S P, Wu, M T, Hsu, F H, Lien, N Z, Szu-Yu Wang, Jung-Yu Hsieh, Ling-Wu Yang, Yang, Tahone, Kuang-Chao Chen, Kuang-Yeu Hsieh, Chih-Yuan Lu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Arrays Interference Logic gates Programming Thin film transistors Three dimensional displays
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