Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).

Bibliographische Detailangaben

Hauptverfasser:	Shestakov, A K, Zhuravlev, K S, Arykov, V S, Kagadei, V A
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping profiles Gallium arsenide MESFETs Substrates Threshold voltage
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