Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).

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Hauptverfasser: Shestakov, A K, Zhuravlev, K S, Arykov, V S, Kagadei, V A
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping profiles
Gallium arsenide
MESFETs
Substrates
Threshold voltage
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creator Shestakov, A K
Zhuravlev, K S
Arykov, V S
Kagadei, V A
description Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).
doi_str_mv 10.1109/SIBIRCON.2010.5555371
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5555371</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5555371</ieee_id><sourcerecordid>5555371</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-f9396bb6d01e7470513f277d540c3afae572fb76a13d1903b2c413561188cd8f3</originalsourceid><addsrcrecordid>eNpVUM1KAzEYjIig1D6BCN8LbE02yWb3qPWvUCxo7yWb_dKNbpMliUjf3gV7cQ4zzDDMYQi5ZXTBGG3uPlYPq_fl5m1R0imSE7hiZ2TeqJqJUghVTXT-z0t2SeYpfdIJQpZS8CuSHsPo_B7GGKwbEJy3wzd6gxA8mF5HbTJGl7IzCYIFF3zhDuOgfcYO9lonsA6HDtBaNBly1D5N9RDhx-Ueco-QTB9y_jpCq2N0GK_JhdVDwvlJZ2T7_LRdvhbrzctqeb8uXENzYRveVG1bdZShEopKxm2pVCcFNVxbjVKVtlWVZrxjDeVtaQTjsmKsrk1XWz4jN3-zDhF3Y3QHHY-701P8F5eSXzE</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Shestakov, A K ; Zhuravlev, K S ; Arykov, V S ; Kagadei, V A</creator><creatorcontrib>Shestakov, A K ; Zhuravlev, K S ; Arykov, V S ; Kagadei, V A</creatorcontrib><description>Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).</description><identifier>ISBN: 9781424476251</identifier><identifier>ISBN: 1424476259</identifier><identifier>EISBN: 9781424476244</identifier><identifier>EISBN: 1424476240</identifier><identifier>EISBN: 1424476267</identifier><identifier>EISBN: 9781424476268</identifier><identifier>DOI: 10.1109/SIBIRCON.2010.5555371</identifier><language>eng</language><publisher>IEEE</publisher><subject>Doping profiles ; Gallium arsenide ; MESFETs ; Substrates ; Threshold voltage</subject><ispartof>2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010, p.584-588</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5555371$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5555371$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shestakov, A K</creatorcontrib><creatorcontrib>Zhuravlev, K S</creatorcontrib><creatorcontrib>Arykov, V S</creatorcontrib><creatorcontrib>Kagadei, V A</creatorcontrib><title>Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier</title><title>2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON)</title><addtitle>SIBIRCON</addtitle><description>Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).</description><subject>Doping profiles</subject><subject>Gallium arsenide</subject><subject>MESFETs</subject><subject>Substrates</subject><subject>Threshold voltage</subject><isbn>9781424476251</isbn><isbn>1424476259</isbn><isbn>9781424476244</isbn><isbn>1424476240</isbn><isbn>1424476267</isbn><isbn>9781424476268</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUM1KAzEYjIig1D6BCN8LbE02yWb3qPWvUCxo7yWb_dKNbpMliUjf3gV7cQ4zzDDMYQi5ZXTBGG3uPlYPq_fl5m1R0imSE7hiZ2TeqJqJUghVTXT-z0t2SeYpfdIJQpZS8CuSHsPo_B7GGKwbEJy3wzd6gxA8mF5HbTJGl7IzCYIFF3zhDuOgfcYO9lonsA6HDtBaNBly1D5N9RDhx-Ueco-QTB9y_jpCq2N0GK_JhdVDwvlJZ2T7_LRdvhbrzctqeb8uXENzYRveVG1bdZShEopKxm2pVCcFNVxbjVKVtlWVZrxjDeVtaQTjsmKsrk1XWz4jN3-zDhF3Y3QHHY-701P8F5eSXzE</recordid><startdate>201007</startdate><enddate>201007</enddate><creator>Shestakov, A K</creator><creator>Zhuravlev, K S</creator><creator>Arykov, V S</creator><creator>Kagadei, V A</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201007</creationdate><title>Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier</title><author>Shestakov, A K ; Zhuravlev, K S ; Arykov, V S ; Kagadei, V A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-f9396bb6d01e7470513f277d540c3afae572fb76a13d1903b2c413561188cd8f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Doping profiles</topic><topic>Gallium arsenide</topic><topic>MESFETs</topic><topic>Substrates</topic><topic>Threshold voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Shestakov, A K</creatorcontrib><creatorcontrib>Zhuravlev, K S</creatorcontrib><creatorcontrib>Arykov, V S</creatorcontrib><creatorcontrib>Kagadei, V A</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shestakov, A K</au><au>Zhuravlev, K S</au><au>Arykov, V S</au><au>Kagadei, V A</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier</atitle><btitle>2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON)</btitle><stitle>SIBIRCON</stitle><date>2010-07</date><risdate>2010</risdate><spage>584</spage><epage>588</epage><pages>584-588</pages><isbn>9781424476251</isbn><isbn>1424476259</isbn><eisbn>9781424476244</eisbn><eisbn>1424476240</eisbn><eisbn>1424476267</eisbn><eisbn>9781424476268</eisbn><abstract>Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).</abstract><pub>IEEE</pub><doi>10.1109/SIBIRCON.2010.5555371</doi><tpages>5</tpages></addata></record>
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Doping profiles
Gallium arsenide
MESFETs
Substrates
Threshold voltage
title Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T23%3A06%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Doping%20profile%20influence%20on%20characteristics%20of%20ion-implanted%20gaas%20field%20effect%20transistor%20with%20the%20schottky%20barrier&rft.btitle=2010%20IEEE%20Region%208%20International%20Conference%20on%20Computational%20Technologies%20in%20Electrical%20and%20Electronics%20Engineering%20(SIBIRCON)&rft.au=Shestakov,%20A%20K&rft.date=2010-07&rft.spage=584&rft.epage=588&rft.pages=584-588&rft.isbn=9781424476251&rft.isbn_list=1424476259&rft_id=info:doi/10.1109/SIBIRCON.2010.5555371&rft_dat=%3Cieee_6IE%3E5555371%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424476244&rft.eisbn_list=1424476240&rft.eisbn_list=1424476267&rft.eisbn_list=9781424476268&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5555371&rfr_iscdi=true