Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).

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Bibliographische Detailangaben
Hauptverfasser: Shestakov, A K, Zhuravlev, K S, Arykov, V S, Kagadei, V A
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping profiles
Gallium arsenide
MESFETs
Substrates
Threshold voltage
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Beschreibung
Zusammenfassung:Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).
DOI:10.1109/SIBIRCON.2010.5555371