Gate-all-around silicon nanowire MOSFETs and circuits

We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET I DSAT = 825/950 μA/μm (circumference-normalized) or 2592/2985 μA/μm (diameter-normal...

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Hauptverfasser:	Sleight, J W, Bangsaruntip, S, Majumdar, A, Cohen, G M, Zhang, Y, Engelmann, S U, Fuller, N C M, Gignac, L M, Mittal, S, Newbury, J S, Frank, M M, Chang, J, Guillorn, M
Format:	Tagungsbericht
Sprache:	eng
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