High surge current ruggedness of 5kV class 4H-SiC SiCGT

The ruggedness of SiCGT (SiC Commutated Gate Turn-off Thyristor) was investigated. The SiCGT was confirmed to operate at over 1200°C, a higher temperature than Si device's destruction temperature. The SiCGT endured a large current of over 2000A (2470A/cm 2 ) per one chip. Positive temperature c...

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Bibliographische Detailangaben

Hauptverfasser:	Ogata, S, Asano, K, Sugawara, Y, Tanaka, A, Miyanagi, Y, Nakayama, K, Izumi, T, Hayashi, T, Nishimura, M
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Fault currents Packaging Pulse width modulation inverters Resistors Semiconductor diodes Silicon carbide Surge protection Temperature Testing Voltage
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