The influence of oxidation-induced stress on the generation current and its impact on scaled device performance

With the continuing reduction of device dimensions, the impact of the isolation process on device performance becomes increasingly important. A major concern when scaling LOCOS and shallow trench isolation structures (STI) is the build-up of localized stress near the isolation edge, often leading to...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Smeys, P., Griffin, P.B., Rek, Z.U., De Wolf, I., Saraswat, K.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Compressive stress Degradation Diffraction Diodes Laboratories MOS devices Oxidation Photonic band gap Spectroscopy Synchrotron radiation
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