Ion metal plasma (IMP) deposited titanium liners for 0.25/0.18 /spl mu/m multilevel interconnections
An inductively coupled plasma (ICP) source is used to produce an ion metal plasma (IMP) in the PVD chamber which has excellent directionality. Compared to collimated PVD titanium liners the electrical results of 0.3 /spl mu/m contact and via structures processed with IMP deposited titanium liners sh...
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creator | Dixit, G.A. Hsu, W.Y. Konecni, A.J. Krishnan, S. Luttmer, J.D. Havemann, R.H. Forster, J. Yao, G.D. Narasimhan, M. Xu, Z. Ramaswami, S. Dhen, F.S. Nulman, J. |
description | An inductively coupled plasma (ICP) source is used to produce an ion metal plasma (IMP) in the PVD chamber which has excellent directionality. Compared to collimated PVD titanium liners the electrical results of 0.3 /spl mu/m contact and via structures processed with IMP deposited titanium liners show significantly improved parametrics. Due to the high bottom coverage of the IMP titanium deposition process a substantial reduction in the liner thickness is possible. Plasma damage studies using MOS capacitor structures connected to large antennae show no differences in leakage currents using the high density plasma titanium liners and the conventional collimated PVD titanium liners. |
doi_str_mv | 10.1109/IEDM.1996.553602 |
format | Conference Proceeding |
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Compared to collimated PVD titanium liners the electrical results of 0.3 /spl mu/m contact and via structures processed with IMP deposited titanium liners show significantly improved parametrics. Due to the high bottom coverage of the IMP titanium deposition process a substantial reduction in the liner thickness is possible. Plasma damage studies using MOS capacitor structures connected to large antennae show no differences in leakage currents using the high density plasma titanium liners and the conventional collimated PVD titanium liners.</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780333934</identifier><identifier>ISBN: 9780780333932</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1996.553602</identifier><language>eng</language><publisher>IEEE</publisher><subject>Atherosclerosis ; Chemical vapor deposition ; Collimators ; Etching ; Plasma applications ; Plasma density ; Plasma materials processing ; Plasma temperature ; Plugs ; Titanium</subject><ispartof>International Electron Devices Meeting. 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Plasma damage studies using MOS capacitor structures connected to large antennae show no differences in leakage currents using the high density plasma titanium liners and the conventional collimated PVD titanium liners.</description><subject>Atherosclerosis</subject><subject>Chemical vapor deposition</subject><subject>Collimators</subject><subject>Etching</subject><subject>Plasma applications</subject><subject>Plasma density</subject><subject>Plasma materials processing</subject><subject>Plasma temperature</subject><subject>Plugs</subject><subject>Titanium</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780333934</isbn><isbn>9780780333932</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jztPwzAURi0eEimwI6Y7wpDkOsZJPEMrMlRiYGCrrOZWusiPyHaR-PdUgpnlO8NZzifEncRGSjTttH7ZNtKYvtFa9didiaqTuq9RDh_nYoXDiEopo54uRIWyV7U0crwSq5w_EbtBG12JeYoBPBXrYHE2ewsP0_btEWZaYuZCMxQuNvDRg-NAKcMhJsCm0-2pYoQ2Lw78sfWncYUdfZEDDoXSPoZA-8Ix5BtxebAu0-0fr8X9Zv3-_FozEe2WxN6m793vCfWv_AHaJkaq</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Dixit, G.A.</creator><creator>Hsu, W.Y.</creator><creator>Konecni, A.J.</creator><creator>Krishnan, S.</creator><creator>Luttmer, J.D.</creator><creator>Havemann, R.H.</creator><creator>Forster, J.</creator><creator>Yao, G.D.</creator><creator>Narasimhan, M.</creator><creator>Xu, Z.</creator><creator>Ramaswami, S.</creator><creator>Dhen, F.S.</creator><creator>Nulman, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Ion metal plasma (IMP) deposited titanium liners for 0.25/0.18 /spl mu/m multilevel interconnections</title><author>Dixit, G.A. ; Hsu, W.Y. ; Konecni, A.J. ; Krishnan, S. ; Luttmer, J.D. ; Havemann, R.H. ; Forster, J. ; Yao, G.D. ; Narasimhan, M. ; Xu, Z. ; Ramaswami, S. ; Dhen, F.S. ; Nulman, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_5536023</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Atherosclerosis</topic><topic>Chemical vapor deposition</topic><topic>Collimators</topic><topic>Etching</topic><topic>Plasma applications</topic><topic>Plasma density</topic><topic>Plasma materials processing</topic><topic>Plasma temperature</topic><topic>Plugs</topic><topic>Titanium</topic><toplevel>online_resources</toplevel><creatorcontrib>Dixit, G.A.</creatorcontrib><creatorcontrib>Hsu, W.Y.</creatorcontrib><creatorcontrib>Konecni, A.J.</creatorcontrib><creatorcontrib>Krishnan, S.</creatorcontrib><creatorcontrib>Luttmer, J.D.</creatorcontrib><creatorcontrib>Havemann, R.H.</creatorcontrib><creatorcontrib>Forster, J.</creatorcontrib><creatorcontrib>Yao, G.D.</creatorcontrib><creatorcontrib>Narasimhan, M.</creatorcontrib><creatorcontrib>Xu, Z.</creatorcontrib><creatorcontrib>Ramaswami, S.</creatorcontrib><creatorcontrib>Dhen, F.S.</creatorcontrib><creatorcontrib>Nulman, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dixit, G.A.</au><au>Hsu, W.Y.</au><au>Konecni, A.J.</au><au>Krishnan, S.</au><au>Luttmer, J.D.</au><au>Havemann, R.H.</au><au>Forster, J.</au><au>Yao, G.D.</au><au>Narasimhan, M.</au><au>Xu, Z.</au><au>Ramaswami, S.</au><au>Dhen, F.S.</au><au>Nulman, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Ion metal plasma (IMP) deposited titanium liners for 0.25/0.18 /spl mu/m multilevel interconnections</atitle><btitle>International Electron Devices Meeting. Technical Digest</btitle><stitle>IEDM</stitle><date>1996</date><risdate>1996</risdate><spage>357</spage><epage>360</epage><pages>357-360</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780333934</isbn><isbn>9780780333932</isbn><abstract>An inductively coupled plasma (ICP) source is used to produce an ion metal plasma (IMP) in the PVD chamber which has excellent directionality. Compared to collimated PVD titanium liners the electrical results of 0.3 /spl mu/m contact and via structures processed with IMP deposited titanium liners show significantly improved parametrics. Due to the high bottom coverage of the IMP titanium deposition process a substantial reduction in the liner thickness is possible. Plasma damage studies using MOS capacitor structures connected to large antennae show no differences in leakage currents using the high density plasma titanium liners and the conventional collimated PVD titanium liners.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.1996.553602</doi></addata></record> |
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identifier | ISSN: 0163-1918 |
ispartof | International Electron Devices Meeting. Technical Digest, 1996, p.357-360 |
issn | 0163-1918 2156-017X |
language | eng |
recordid | cdi_ieee_primary_553602 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Atherosclerosis Chemical vapor deposition Collimators Etching Plasma applications Plasma density Plasma materials processing Plasma temperature Plugs Titanium |
title | Ion metal plasma (IMP) deposited titanium liners for 0.25/0.18 /spl mu/m multilevel interconnections |
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