Numerical simulation of a magnetron plasma sputtering system using VORPAL

Summary form only given. Three-dimensional numerical simulation is conducted for a magnetron sputtering plasma using the particle in cell code VORPAL. Numerical simulation of sputtering process requires accurate models of nuclear stopping in materials, particle dynamics and self-consistent electroma...

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Hauptverfasser:	Chuandong Zhou, Stoltz, P H
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Conducting materials Electromagnetic fields Electromagnetic modeling Magnetic materials Numerical simulation Plasma applications Plasma density Plasma materials processing Plasma simulation Sputtering
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creator	Chuandong Zhou Stoltz, P H
description	Summary form only given. Three-dimensional numerical simulation is conducted for a magnetron sputtering plasma using the particle in cell code VORPAL. Numerical simulation of sputtering process requires accurate models of nuclear stopping in materials, particle dynamics and self-consistent electromagnetic fields. VORPAL can simulate cold dense plasma sputtering system under many different electromagnetic configurations. The dynamics of both incident particles and sputtered neutral atoms are simulated in VORPAL. The sputtering yield is calculated from a standalone numerical library for a variety of materials that are commonly used in industrial applications. Numerical simulation of the spatial distribution of sputtered atoms resulting from a cold dense magnetron sputtering plasma under externally applied magnetic field and self-consistent electric field is presented.
doi_str_mv	10.1109/PLASMA.2010.5534033
format	Conference Proceeding
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Three-dimensional numerical simulation is conducted for a magnetron sputtering plasma using the particle in cell code VORPAL. Numerical simulation of sputtering process requires accurate models of nuclear stopping in materials, particle dynamics and self-consistent electromagnetic fields. VORPAL can simulate cold dense plasma sputtering system under many different electromagnetic configurations. The dynamics of both incident particles and sputtered neutral atoms are simulated in VORPAL. The sputtering yield is calculated from a standalone numerical library for a variety of materials that are commonly used in industrial applications. 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Three-dimensional numerical simulation is conducted for a magnetron sputtering plasma using the particle in cell code VORPAL. Numerical simulation of sputtering process requires accurate models of nuclear stopping in materials, particle dynamics and self-consistent electromagnetic fields. VORPAL can simulate cold dense plasma sputtering system under many different electromagnetic configurations. The dynamics of both incident particles and sputtered neutral atoms are simulated in VORPAL. The sputtering yield is calculated from a standalone numerical library for a variety of materials that are commonly used in industrial applications. Numerical simulation of the spatial distribution of sputtered atoms resulting from a cold dense magnetron sputtering plasma under externally applied magnetic field and self-consistent electric field is presented.</description><subject>Conducting materials</subject><subject>Electromagnetic fields</subject><subject>Electromagnetic modeling</subject><subject>Magnetic materials</subject><subject>Numerical simulation</subject><subject>Plasma applications</subject><subject>Plasma density</subject><subject>Plasma materials processing</subject><subject>Plasma simulation</subject><subject>Sputtering</subject><issn>0730-9244</issn><issn>2576-7208</issn><isbn>9781424454747</isbn><isbn>1424454743</isbn><isbn>9781424454754</isbn><isbn>1424454751</isbn><isbn>142445476X</isbn><isbn>9781424454761</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9j09rwkAUxF-1gsHmE3jZLxD7sn-65hhEaSGtotKrLGWVlWwMeZuD394tePHiXIb5zVwGYJrjLM-xeN9U5e67nHGMQCkhUYgXSAs9zyWXUkmt5AASrvRHpjnOhw-d1K-QoBaYFRGMISU6Y5RUHFEn8PXTe9u5P1Mzcr6vTXCXhl2OzDBvTo0NXYxtbcgbRm0fQhw3J0ZXCtaznv7D73q7Kas3GB1NTTa9-wSmq-V-8Zk5a-2h7Zw33fVwPyCetzcoW0PZ</recordid><startdate>201006</startdate><enddate>201006</enddate><creator>Chuandong Zhou</creator><creator>Stoltz, P H</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201006</creationdate><title>Numerical simulation of a magnetron plasma sputtering system using VORPAL</title><author>Chuandong Zhou ; Stoltz, P H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_55340333</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Conducting materials</topic><topic>Electromagnetic fields</topic><topic>Electromagnetic modeling</topic><topic>Magnetic materials</topic><topic>Numerical simulation</topic><topic>Plasma applications</topic><topic>Plasma density</topic><topic>Plasma materials processing</topic><topic>Plasma simulation</topic><topic>Sputtering</topic><toplevel>online_resources</toplevel><creatorcontrib>Chuandong Zhou</creatorcontrib><creatorcontrib>Stoltz, P H</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chuandong Zhou</au><au>Stoltz, P H</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Numerical simulation of a magnetron plasma sputtering system using VORPAL</atitle><btitle>2010 Abstracts IEEE International Conference on Plasma Science</btitle><stitle>PLASMA</stitle><date>2010-06</date><risdate>2010</risdate><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0730-9244</issn><eissn>2576-7208</eissn><isbn>9781424454747</isbn><isbn>1424454743</isbn><eisbn>9781424454754</eisbn><eisbn>1424454751</eisbn><eisbn>142445476X</eisbn><eisbn>9781424454761</eisbn><abstract>Summary form only given. Three-dimensional numerical simulation is conducted for a magnetron sputtering plasma using the particle in cell code VORPAL. Numerical simulation of sputtering process requires accurate models of nuclear stopping in materials, particle dynamics and self-consistent electromagnetic fields. VORPAL can simulate cold dense plasma sputtering system under many different electromagnetic configurations. The dynamics of both incident particles and sputtered neutral atoms are simulated in VORPAL. The sputtering yield is calculated from a standalone numerical library for a variety of materials that are commonly used in industrial applications. Numerical simulation of the spatial distribution of sputtered atoms resulting from a cold dense magnetron sputtering plasma under externally applied magnetic field and self-consistent electric field is presented.</abstract><pub>IEEE</pub><doi>10.1109/PLASMA.2010.5534033</doi></addata></record>
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Conducting materials Electromagnetic fields Electromagnetic modeling Magnetic materials Numerical simulation Plasma applications Plasma density Plasma materials processing Plasma simulation Sputtering
title	Numerical simulation of a magnetron plasma sputtering system using VORPAL
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