A new n-type and improved p-type pseudo-ternary (Bi2Te3)(Sb2Te3)(Sb2Se3) alloy for Peltier cooling
The pseudo-ternary alloy of (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) has been explored for over twenty-five years with little progress in the figure of merit, p-type 3.4/spl times/10/sup -3//K and n-type 3.2/spl times/10/sup -3//K. Using multiple dopants, Te and SbI/sub 3/, highe...
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creator | Ettenberg, M.H. Jesser, W.A. Rosi, F.D. |
description | The pseudo-ternary alloy of (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) has been explored for over twenty-five years with little progress in the figure of merit, p-type 3.4/spl times/10/sup -3//K and n-type 3.2/spl times/10/sup -3//K. Using multiple dopants, Te and SbI/sub 3/, higher figure of merit material can be achieved without creating more of the deleterious pure Te commonly found as a second phase in the p-type alloy, (Bi/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Te/sub 3/)/sub 72/(Sb/sub 2/Se/sub 3/)/sub 3/. Using a combination of the two dopants figures of merit as high as 3.7/spl times/10/sup -3//K have been achieved. Using two dopants has also permitted the creation of an n-type alloy with a composition of (Bi/sub 2/Te/sub 3/)/sub 70/(Sb/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Se/sub 3/)/sub 5/. Previously n-type doping could not be achieved with a single dopant because the alloy as grown always exhibits p-type conductivity. Using Te and SbI/sub 3/ together as dopants, or SbI/sub 3/ by itself in this alloy produces n-type material with a figure of merit of 3.4/spl times/10/sup -3//K. |
doi_str_mv | 10.1109/ICT.1996.553255 |
format | Conference Proceeding |
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Using multiple dopants, Te and SbI/sub 3/, higher figure of merit material can be achieved without creating more of the deleterious pure Te commonly found as a second phase in the p-type alloy, (Bi/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Te/sub 3/)/sub 72/(Sb/sub 2/Se/sub 3/)/sub 3/. Using a combination of the two dopants figures of merit as high as 3.7/spl times/10/sup -3//K have been achieved. Using two dopants has also permitted the creation of an n-type alloy with a composition of (Bi/sub 2/Te/sub 3/)/sub 70/(Sb/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Se/sub 3/)/sub 5/. Previously n-type doping could not be achieved with a single dopant because the alloy as grown always exhibits p-type conductivity. Using Te and SbI/sub 3/ together as dopants, or SbI/sub 3/ by itself in this alloy produces n-type material with a figure of merit of 3.4/spl times/10/sup -3//K.</description><identifier>ISBN: 9780780332218</identifier><identifier>ISBN: 0780332210</identifier><identifier>DOI: 10.1109/ICT.1996.553255</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bismuth ; Composite materials ; Conducting materials ; Doping ; Equations ; Phonons ; Tellurium ; Thermal conductivity ; Thermal resistance ; Thermoelectricity</subject><ispartof>Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96, 1996, p.52-56</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c150t-ab1e5f827a03ffae5c2791f05fbbe7f581de43b2bf51783b12eee6a272ba52873</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/553255$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/553255$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ettenberg, M.H.</creatorcontrib><creatorcontrib>Jesser, W.A.</creatorcontrib><creatorcontrib>Rosi, F.D.</creatorcontrib><title>A new n-type and improved p-type pseudo-ternary (Bi2Te3)(Sb2Te3)(Sb2Se3) alloy for Peltier cooling</title><title>Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96</title><addtitle>ICT</addtitle><description>The pseudo-ternary alloy of (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) has been explored for over twenty-five years with little progress in the figure of merit, p-type 3.4/spl times/10/sup -3//K and n-type 3.2/spl times/10/sup -3//K. Using multiple dopants, Te and SbI/sub 3/, higher figure of merit material can be achieved without creating more of the deleterious pure Te commonly found as a second phase in the p-type alloy, (Bi/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Te/sub 3/)/sub 72/(Sb/sub 2/Se/sub 3/)/sub 3/. Using a combination of the two dopants figures of merit as high as 3.7/spl times/10/sup -3//K have been achieved. Using two dopants has also permitted the creation of an n-type alloy with a composition of (Bi/sub 2/Te/sub 3/)/sub 70/(Sb/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Se/sub 3/)/sub 5/. Previously n-type doping could not be achieved with a single dopant because the alloy as grown always exhibits p-type conductivity. Using Te and SbI/sub 3/ together as dopants, or SbI/sub 3/ by itself in this alloy produces n-type material with a figure of merit of 3.4/spl times/10/sup -3//K.</description><subject>Bismuth</subject><subject>Composite materials</subject><subject>Conducting materials</subject><subject>Doping</subject><subject>Equations</subject><subject>Phonons</subject><subject>Tellurium</subject><subject>Thermal conductivity</subject><subject>Thermal resistance</subject><subject>Thermoelectricity</subject><isbn>9780780332218</isbn><isbn>0780332210</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9kM1LxDAUxAMiKGvPgqcc10NrPvo26XEtui4sKGw9L0n7IpFuU9Kq9L-3UHEY-MEMPB5DyC1nGeeseNiXVcaLYpMBSAFwQZJCaTZbSiG4viLJMHyyWTmAyPk1sVva4Q_t0nHqkZquof7cx_CNDe2XrB_wqwnpiLEzcaLrRy8qlPfro_3ncSY1bRsm6kKkb9iOHiOtQ2h993FDLp1pB0z-uCLvz09V-ZIeXnf7cntIaw5sTI3lCE4LZZh0ziDUQhXcMXDWonKgeYO5tMI64EpLywUiboxQwhoQWskVuVvu-rk49dGf539PyxDyF_9BUd4</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Ettenberg, M.H.</creator><creator>Jesser, W.A.</creator><creator>Rosi, F.D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>A new n-type and improved p-type pseudo-ternary (Bi2Te3)(Sb2Te3)(Sb2Se3) alloy for Peltier cooling</title><author>Ettenberg, M.H. ; Jesser, W.A. ; Rosi, F.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c150t-ab1e5f827a03ffae5c2791f05fbbe7f581de43b2bf51783b12eee6a272ba52873</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Bismuth</topic><topic>Composite materials</topic><topic>Conducting materials</topic><topic>Doping</topic><topic>Equations</topic><topic>Phonons</topic><topic>Tellurium</topic><topic>Thermal conductivity</topic><topic>Thermal resistance</topic><topic>Thermoelectricity</topic><toplevel>online_resources</toplevel><creatorcontrib>Ettenberg, M.H.</creatorcontrib><creatorcontrib>Jesser, W.A.</creatorcontrib><creatorcontrib>Rosi, F.D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ettenberg, M.H.</au><au>Jesser, W.A.</au><au>Rosi, F.D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A new n-type and improved p-type pseudo-ternary (Bi2Te3)(Sb2Te3)(Sb2Se3) alloy for Peltier cooling</atitle><btitle>Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96</btitle><stitle>ICT</stitle><date>1996</date><risdate>1996</risdate><spage>52</spage><epage>56</epage><pages>52-56</pages><isbn>9780780332218</isbn><isbn>0780332210</isbn><abstract>The pseudo-ternary alloy of (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) has been explored for over twenty-five years with little progress in the figure of merit, p-type 3.4/spl times/10/sup -3//K and n-type 3.2/spl times/10/sup -3//K. Using multiple dopants, Te and SbI/sub 3/, higher figure of merit material can be achieved without creating more of the deleterious pure Te commonly found as a second phase in the p-type alloy, (Bi/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Te/sub 3/)/sub 72/(Sb/sub 2/Se/sub 3/)/sub 3/. Using a combination of the two dopants figures of merit as high as 3.7/spl times/10/sup -3//K have been achieved. Using two dopants has also permitted the creation of an n-type alloy with a composition of (Bi/sub 2/Te/sub 3/)/sub 70/(Sb/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Se/sub 3/)/sub 5/. Previously n-type doping could not be achieved with a single dopant because the alloy as grown always exhibits p-type conductivity. Using Te and SbI/sub 3/ together as dopants, or SbI/sub 3/ by itself in this alloy produces n-type material with a figure of merit of 3.4/spl times/10/sup -3//K.</abstract><pub>IEEE</pub><doi>10.1109/ICT.1996.553255</doi><tpages>5</tpages></addata></record> |
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identifier | ISBN: 9780780332218 |
ispartof | Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96, 1996, p.52-56 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Bismuth Composite materials Conducting materials Doping Equations Phonons Tellurium Thermal conductivity Thermal resistance Thermoelectricity |
title | A new n-type and improved p-type pseudo-ternary (Bi2Te3)(Sb2Te3)(Sb2Se3) alloy for Peltier cooling |
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