Advanced failure analysis of photon emission on FEOL failing of 45nm technology node

Global failure analysis techniques are very critical in the failure site isolation, especially continuous scaling down IC device. Active photon probing is most dominant technique of the global failure analysis technique. In this paper, two real case of the 45 nm technology node was studied. Both of...

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Bibliographische Detailangaben

Hauptverfasser:	Chen Changqing, Ang Ghim Boon, Ng Hui Peng, Yip Kim Hong, Wang Qingxiao
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Condition monitoring Failure analysis Foundries Isolation technology Optical beams Photonic integrated circuits Silicon Thermal resistance Voltage
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