Advanced failure analysis of photon emission on FEOL failing of 45nm technology node

Advanced failure analysis of photon emission on FEOL failing of 45nm technology node

Global failure analysis techniques are very critical in the failure site isolation, especially continuous scaling down IC device. Active photon probing is most dominant technique of the global failure analysis technique. In this paper, two real case of the 45 nm technology node was studied. Both of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chen Changqing, Ang Ghim Boon, Ng Hui Peng, Yip Kim Hong, Wang Qingxiao
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Condition monitoring
Failure analysis
Foundries
Isolation technology
Optical beams
Photonic integrated circuits
Silicon
Thermal resistance
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Global failure analysis techniques are very critical in the failure site isolation, especially continuous scaling down IC device. Active photon probing is most dominant technique of the global failure analysis technique. In this paper, two real case of the 45 nm technology node was studied. Both of the unit failed in the FEOL. Thermally-induced Voltage Alteration (TIVA) and Light-induce Voltage Alteration (LIVA) were performed on the failed device. Detailed analysis on the difference and nature of TIVA and LIVA were studied in this real case. TEM and EDX result also confirm the electrical FA result.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2010.5531981