Recent advances in III-V nitride electron devices

We review the performance and discuss the potential of GaN-based field effect transistors for high-power, high-temperature operation. Recent Monte Carlo simulations predict that GaN-based transistors operating at high voltages may outperform GaAs-based transistors even at room temperature. Our GaN/A...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Khan, M.A., Chen, Q., Yang, J., Anwar, M.Z., Blasingame, M., Shur, M.S., Burm, J., Eastman, L.F.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Cutoff frequency Electron devices FETs Gallium nitride HEMTs III-V semiconductor materials Temperature Transistors Voltage
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