Channel temperature estimation in GaAs FET devices
Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors...
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| creator | Fattorini, Anthony P Tarazi, Jabra Mahon, Simon J |
| description | Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed. |
| doi_str_mv | 10.1109/MWSYM.2010.5518202 |
| format | Conference Proceeding |
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Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 1424460565</identifier><identifier>ISBN: 9781424460564</identifier><identifier>EISSN: 2576-7216</identifier><identifier>EISBN: 1424460581</identifier><identifier>EISBN: 1424477328</identifier><identifier>EISBN: 9781424460588</identifier><identifier>EISBN: 9781424477326</identifier><identifier>EISBN: 9781424460571</identifier><identifier>EISBN: 1424460573</identifier><identifier>DOI: 10.1109/MWSYM.2010.5518202</identifier><language>eng</language><publisher>IEEE</publisher><subject>channel temperature ; Electrical resistance measurement ; Epitaxial layers ; FET amplifiers ; FETs ; Finite difference methods ; Gallium arsenide ; Heat flow ; Infrared heating ; infrared measurement ; junction temperature ; Measurement techniques ; Numerical models ; Performance analysis ; Temperature ; temperature measurement ; thermal analysis ; thermal modeling</subject><ispartof>2010 IEEE MTT-S International Microwave Symposium, 2010, p.320-323</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5518202$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5518202$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fattorini, Anthony P</creatorcontrib><creatorcontrib>Tarazi, Jabra</creatorcontrib><creatorcontrib>Mahon, Simon J</creatorcontrib><title>Channel temperature estimation in GaAs FET devices</title><title>2010 IEEE MTT-S International Microwave Symposium</title><addtitle>MWSYM</addtitle><description>Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. 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A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.</description><subject>channel temperature</subject><subject>Electrical resistance measurement</subject><subject>Epitaxial layers</subject><subject>FET amplifiers</subject><subject>FETs</subject><subject>Finite difference methods</subject><subject>Gallium arsenide</subject><subject>Heat flow</subject><subject>Infrared heating</subject><subject>infrared measurement</subject><subject>junction temperature</subject><subject>Measurement techniques</subject><subject>Numerical models</subject><subject>Performance analysis</subject><subject>Temperature</subject><subject>temperature measurement</subject><subject>thermal analysis</subject><subject>thermal modeling</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>1424460565</isbn><isbn>9781424460564</isbn><isbn>1424460581</isbn><isbn>1424477328</isbn><isbn>9781424460588</isbn><isbn>9781424477326</isbn><isbn>9781424460571</isbn><isbn>1424460573</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFj91Kw0AUhNc_MNa-gN7sC6Ses_97WYKtQosXKupV2WRPcKWNJRsF396ABedmGD4YZhi7Qpghgr9Zvzy-rWcCxqw1OgHiiF2gEkoZ0A6PWSG0NaUVaE7-gdGnrABUvjRKv56zac4fMEppoZ0vmKjeQ9fRlg-021Mfhq-eOOUh7cKQPjueOr4M88wXt0880ndqKF-yszZsM00PPmHPI63uytXD8r6ar8qEoIfSReV8rZRsg4fYhNoZMLWJtrHGKCucx1qCjVR7F1uJPipJHrCBVgUho5yw67_eRESbfT9O6n82h-_yF6MRR_w</recordid><startdate>201005</startdate><enddate>201005</enddate><creator>Fattorini, Anthony P</creator><creator>Tarazi, Jabra</creator><creator>Mahon, Simon J</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201005</creationdate><title>Channel temperature estimation in GaAs FET devices</title><author>Fattorini, Anthony P ; Tarazi, Jabra ; Mahon, Simon J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-8d489b443fa90dcab8606b6d7c766472891b307deb98df319d43e901c0f4a23d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>channel temperature</topic><topic>Electrical resistance measurement</topic><topic>Epitaxial layers</topic><topic>FET amplifiers</topic><topic>FETs</topic><topic>Finite difference methods</topic><topic>Gallium arsenide</topic><topic>Heat flow</topic><topic>Infrared heating</topic><topic>infrared measurement</topic><topic>junction temperature</topic><topic>Measurement techniques</topic><topic>Numerical models</topic><topic>Performance analysis</topic><topic>Temperature</topic><topic>temperature measurement</topic><topic>thermal analysis</topic><topic>thermal modeling</topic><toplevel>online_resources</toplevel><creatorcontrib>Fattorini, Anthony P</creatorcontrib><creatorcontrib>Tarazi, Jabra</creatorcontrib><creatorcontrib>Mahon, Simon J</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fattorini, Anthony P</au><au>Tarazi, Jabra</au><au>Mahon, Simon J</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Channel temperature estimation in GaAs FET devices</atitle><btitle>2010 IEEE MTT-S International Microwave Symposium</btitle><stitle>MWSYM</stitle><date>2010-05</date><risdate>2010</risdate><spage>320</spage><epage>323</epage><pages>320-323</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>1424460565</isbn><isbn>9781424460564</isbn><eisbn>1424460581</eisbn><eisbn>1424477328</eisbn><eisbn>9781424460588</eisbn><eisbn>9781424477326</eisbn><eisbn>9781424460571</eisbn><eisbn>1424460573</eisbn><abstract>Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2010.5518202</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2010 IEEE MTT-S International Microwave Symposium, 2010, p.320-323 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_5518202 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | channel temperature Electrical resistance measurement Epitaxial layers FET amplifiers FETs Finite difference methods Gallium arsenide Heat flow Infrared heating infrared measurement junction temperature Measurement techniques Numerical models Performance analysis Temperature temperature measurement thermal analysis thermal modeling |
| title | Channel temperature estimation in GaAs FET devices |
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