Modeling and metrology of metallic nanowires with application to microwave interconnects
Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with Au microwire (MW) interconnect and air gaps in the middle of the CP...
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| creator | Kichul Kim Wallis, T Mitch Rice, Paul Chiang, Chin-Jen Imtiaz, Atif Kabos, Pavel Filipovic, Dejan S |
| description | Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with Au microwire (MW) interconnect and air gaps in the middle of the CPW. Comparison with measurements reveals significantly larger errors from circuit models though all dimensions are much smaller than wavelength. Similar CPW devices hosting 100 nm and 250 nm diameter Pt nanowires (NWs) are then investigated to determine the ranges of conductivity and contact resistance for each Pt NW. An algorithm that utilizes the transmission line theory and different nanowire lengths to determine the actual conductivity and contact resistance is proposed and validated. |
| doi_str_mv | 10.1109/MWSYM.2010.5518053 |
| format | Conference Proceeding |
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Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with Au microwire (MW) interconnect and air gaps in the middle of the CPW. Comparison with measurements reveals significantly larger errors from circuit models though all dimensions are much smaller than wavelength. Similar CPW devices hosting 100 nm and 250 nm diameter Pt nanowires (NWs) are then investigated to determine the ranges of conductivity and contact resistance for each Pt NW. An algorithm that utilizes the transmission line theory and different nanowire lengths to determine the actual conductivity and contact resistance is proposed and validated.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2010.5518053</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0149-645X |
| ispartof | 2010 IEEE MTT-S International Microwave Symposium, 2010, p.1292-1295 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_5518053 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Benchmark testing Circuit testing Conductivity contact impedance Contact resistance Coplanar waveguides Integrated circuit interconnections Interconnects measurement Metrology Microwave devices modeling Moment methods Nanowires |
| title | Modeling and metrology of metallic nanowires with application to microwave interconnects |
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