Parametric failure analysis of embedded SRAMs using fast & accurate dynamic analysis

Increased die-to-die and on-die variations in scaled technologies can lead to parametric failures (Read/Write/Access) in embedded SRAMs. Conventionally, SRAM bit-cell failure analysis is based on the Static Noise Margin (SNM), a metric that leads to conservative estimate of design yield. In this pap...

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Bibliographische Detailangaben

Hauptverfasser:	Vatajelu, Elena I, Panagopoulos, Georgios, Roy, Kaushik, Figueras, Joan
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	alpha-power current law Failure analysis SRAM DNM SRAM failure analysis SRAM SNM SRAM yield
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