Integrated Circuit Implementation for a GaN HFET Driver Circuit

This paper presents the design and implementation of a new integrated circuit (IC) that is suitable for driving the new generation of high-frequency GaN HFETs. The circuit, based upon a resonant switching transition technique, is first briefly described and then discussed in detail, focusing on the...

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Veröffentlicht in:	IEEE transactions on industry applications 2010-09, Vol.46 (5), p.2056-2067
Hauptverfasser:	Bo Wang, Riva, M, Bakos, J D, Monti, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Driver circuits Drivers Electric potential Electronics Focusing Frequency Gallium nitride Gallium nitrides GaN HFET gate driver integrated circuit (IC) HEMTs high frequency Integrated circuits MODFETs Process design Resonance RLC circuits Switches Switching circuits Voltage
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