Study of hydrogen gettering effects in plasma immersion ion implantation doping experiments

Summary form only given, as follows. The gettering of some common impurities such as Fe, Cu, Al and Na in silicon wafers from low energy and high dose hydrogen ion implantation was studied. It is found that PIII is an effective and economic technique to integrate the gettering and doping processes a...

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Bibliographische Detailangaben
Hauptverfasser: Song, L., Zong, X., Qin, S., Chan, C.
Format: Tagungsbericht
Sprache:eng
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