Gain saturation in 60-fs mode-locked semiconductor laser

A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation.

Bibliographische Detailangaben

Hauptverfasser:	Quarterman, Adrian H, Wilcox, Keith G, Apostolopoulos, Vasilis, Mihoubi, Zakaria, Barnes, Mark, Farrer, Ian, Ritchie, David A, Tropper, Anne
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	(140.5960) Semiconductor lasers (320.7090) Ultrafast lasers (320.7120) Ultrafast phenomena Autocorrelation Laser mode locking Optical pulses Optical saturation Optical scattering Quantum well lasers Semiconductor lasers Space vector pulse width modulation Surface emitting lasers Ultrafast optics
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