CMOS compatible thin wafer processing using temporary mechanical wafer, adhesive and laser release of thin chips/wafers for 3D integration
This paper reports a thin wafer handling technology that is compatible to CMOS processing conditions to enable 3D integration and assembly with high throughput at low cost. Using pulsed ultraviolet (UV) radiation from excimer lasers, device wafers as thin as 50μm can be released from the temporary m...
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| creator | Bing Dang Andry, Paul Tsang, Cornelia Maria, Joana Polastre, Robert Trzcinski, Robert Prabhakar, Aparna Knickerbocker, John |
| description | This paper reports a thin wafer handling technology that is compatible to CMOS processing conditions to enable 3D integration and assembly with high throughput at low cost. Using pulsed ultraviolet (UV) radiation from excimer lasers, device wafers as thin as 50μm can be released from the temporary mechanical handler wafer in less than 1min. Bonding, adhesive, debonding and post debond clean processes were demonstrated. CMOS circuit test vehicles were shown to be compatible with this temporary bonding and debonding processes. |
| doi_str_mv | 10.1109/ECTC.2010.5490820 |
| format | Conference Proceeding |
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Using pulsed ultraviolet (UV) radiation from excimer lasers, device wafers as thin as 50μm can be released from the temporary mechanical handler wafer in less than 1min. Bonding, adhesive, debonding and post debond clean processes were demonstrated. 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Using pulsed ultraviolet (UV) radiation from excimer lasers, device wafers as thin as 50μm can be released from the temporary mechanical handler wafer in less than 1min. Bonding, adhesive, debonding and post debond clean processes were demonstrated. CMOS circuit test vehicles were shown to be compatible with this temporary bonding and debonding processes.</description><subject>Chemical lasers</subject><subject>Chemical technology</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Costs</subject><subject>Glass</subject><subject>Laser ablation</subject><subject>Optical materials</subject><subject>Throughput</subject><subject>Wafer bonding</subject><issn>0569-5503</issn><issn>2377-5726</issn><isbn>9781424464104</isbn><isbn>1424464102</isbn><isbn>9781424464111</isbn><isbn>1424464110</isbn><isbn>1424464129</isbn><isbn>9781424464128</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUMlOwzAQNZtEVfoBiIs_gLTjrU6OKJRFKuqBcq5cZ9wYpUlkBxC_wFdjtVyYwyya997oDSHXDKaMQTFblOtyyiGNShaQczghk0LnTHIp55IxdkpGXGidKc3nZ_92IM_JCNS8yJQCcUkmMb5DCqk4ABuRn_Jl9Uptt-_N4LcN0qH2Lf0yDgPtQ2cxRt_u6MchD7jvu2DCN92jrU3rrWmO2Ftqqhqj_0Rq2oo2JiZ-wAZTQzt3VLW17-PsgI_UdYGKe-rbAXch3e7aK3LhTBNx8lfH5O1hsS6fsuXq8bm8W2aeaTVkRlunUGrQxghuLEtu8i3PubZqW3HFCuUAtZGVdqJg4BIQcwOgpAQhQIzJzVHXI-KmD36fHG3-Pit-AfsQaRs</recordid><startdate>201006</startdate><enddate>201006</enddate><creator>Bing Dang</creator><creator>Andry, Paul</creator><creator>Tsang, Cornelia</creator><creator>Maria, Joana</creator><creator>Polastre, Robert</creator><creator>Trzcinski, Robert</creator><creator>Prabhakar, Aparna</creator><creator>Knickerbocker, John</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201006</creationdate><title>CMOS compatible thin wafer processing using temporary mechanical wafer, adhesive and laser release of thin chips/wafers for 3D integration</title><author>Bing Dang ; Andry, Paul ; Tsang, Cornelia ; Maria, Joana ; Polastre, Robert ; Trzcinski, Robert ; Prabhakar, Aparna ; Knickerbocker, John</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-a7cf5e4707aa32ac10008b2827c5bd25195f0e7a4d7f3910f07ae8a0054403303</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Chemical lasers</topic><topic>Chemical technology</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Costs</topic><topic>Glass</topic><topic>Laser ablation</topic><topic>Optical materials</topic><topic>Throughput</topic><topic>Wafer bonding</topic><toplevel>online_resources</toplevel><creatorcontrib>Bing Dang</creatorcontrib><creatorcontrib>Andry, Paul</creatorcontrib><creatorcontrib>Tsang, Cornelia</creatorcontrib><creatorcontrib>Maria, Joana</creatorcontrib><creatorcontrib>Polastre, Robert</creatorcontrib><creatorcontrib>Trzcinski, Robert</creatorcontrib><creatorcontrib>Prabhakar, Aparna</creatorcontrib><creatorcontrib>Knickerbocker, John</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bing Dang</au><au>Andry, Paul</au><au>Tsang, Cornelia</au><au>Maria, Joana</au><au>Polastre, Robert</au><au>Trzcinski, Robert</au><au>Prabhakar, Aparna</au><au>Knickerbocker, John</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>CMOS compatible thin wafer processing using temporary mechanical wafer, adhesive and laser release of thin chips/wafers for 3D integration</atitle><btitle>2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)</btitle><stitle>ECTC</stitle><date>2010-06</date><risdate>2010</risdate><spage>1393</spage><epage>1398</epage><pages>1393-1398</pages><issn>0569-5503</issn><eissn>2377-5726</eissn><isbn>9781424464104</isbn><isbn>1424464102</isbn><eisbn>9781424464111</eisbn><eisbn>1424464110</eisbn><eisbn>1424464129</eisbn><eisbn>9781424464128</eisbn><abstract>This paper reports a thin wafer handling technology that is compatible to CMOS processing conditions to enable 3D integration and assembly with high throughput at low cost. Using pulsed ultraviolet (UV) radiation from excimer lasers, device wafers as thin as 50μm can be released from the temporary mechanical handler wafer in less than 1min. Bonding, adhesive, debonding and post debond clean processes were demonstrated. CMOS circuit test vehicles were shown to be compatible with this temporary bonding and debonding processes.</abstract><pub>IEEE</pub><doi>10.1109/ECTC.2010.5490820</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0569-5503 |
| ispartof | 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC), 2010, p.1393-1398 |
| issn | 0569-5503 2377-5726 |
| language | eng |
| recordid | cdi_ieee_primary_5490820 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical lasers Chemical technology CMOS process CMOS technology Costs Glass Laser ablation Optical materials Throughput Wafer bonding |
| title | CMOS compatible thin wafer processing using temporary mechanical wafer, adhesive and laser release of thin chips/wafers for 3D integration |
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