Benchmarking of HBT models for InP based DHBT modeling

Benchmarking of HBT models for InP based DHBT modeling

In this paper the modeling results of a given InP/InGaAs/InP DHBT technology (0.7 × 7 μm emitter area) have been shown with two advanced compact models, HICUM L0 and Agilent HBT. Shortcomings of these models have been pointed out and their suitability for modeling these high frequency devices has be...

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Hauptverfasser: Ghosh, S, Zimmer, T, Ardouin, B, Maneux, C, Frégonèse, S, Marc, F, Grandchamp, B, Koné, G A
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current density
Electrons
Frequency
Heterojunction bipolar transistors
III-V semiconductor materials
Indium gallium arsenide
Indium phosphide
Microelectronics
Photonic band gap
Solid modeling
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Zusammenfassung:In this paper the modeling results of a given InP/InGaAs/InP DHBT technology (0.7 × 7 μm emitter area) have been shown with two advanced compact models, HICUM L0 and Agilent HBT. Shortcomings of these models have been pointed out and their suitability for modeling these high frequency devices has been discussed.
DOI:10.1109/MIEL.2010.5490456