Reliability constraints for TANOS memories due to alumina trapping and leakage

In this work we present a detailed investigation of TANOS memory reliability, focusing on issues raised by Al 2 O 3 trapping/detrapping and leakage. These effects are investigated as a function of alumina thickness, electric field and temperature, comparing experimental and modeling results for trap...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Amoroso, S M, Mauri, A, Galbiati, N, Scozzari, C, Mascellino, E, Camozzi, E, Rangoni, A, Ghilardi, T, Grossi, A, Tessariol, P, Compagnoni, C M, Maconi, A, Lacaita, A L, Spinelli, A S, Ghidini, G
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitors charge-trapping memories Electron traps Flash memories high-k dielectrics High-K gate dielectrics Memory management Nonvolatile memory Parameter extraction Research and development Semiconductor device modeling Stress Temperature
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!