Observation of three-level random telegraph noise in GIDL current of Saddle-Fin type DRAM cell transistor

Multi level RTNs have been measured in GIDL current of DRAM cell transistor. Three-level RTN which has not been reported in GIDL current was observed. We found that this RTN has unique characteristics which could be distinguished from two-level RTN by single trap and four-level RTN due to two traps....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Byoungchan Oh, Heung-Jae Cho, Heesang Kim, Hyungcheol Shin
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Current measurement Electric variables measurement Electron traps Leakage current Noise level Noise measurement Random access memory Semiconductor device noise Telegraphy Voltage
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