A CMOS wide-bandwidth high-power linear-in-dB variable attenuator using body voltage distribution method
A wide bandwidth, highly linear variable attenuator designed in 0.18 μm triple-well CMOS process is presented. This attenuator is based on three cascade π-networks with body voltage distribution scheme to minimize the effects of the input power levels. Measurements show it achieves minimum 1-dB gain...
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| creator | Yan-Yu Huang Wangmyong Woo Chang-Ho Lee Laskar, Joy |
| description | A wide bandwidth, highly linear variable attenuator designed in 0.18 μm triple-well CMOS process is presented. This attenuator is based on three cascade π-networks with body voltage distribution scheme to minimize the effects of the input power levels. Measurements show it achieves minimum 1-dB gain compression of 7.5 dBm. The mid-band insertion loss is 1.6 dB and the maximum attenuation is 34.8 dB. This attenuator has a linear-in-dB controllability from 400 MHz to 3.7 GHz with input return loss better than 9 dB. To our knowledge, this is the highest linear CMOS variable attenuator with a wide bandwidth of 3.3 GHz. |
| doi_str_mv | 10.1109/RFIC.2010.5477366 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5477366</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5477366</ieee_id><sourcerecordid>5477366</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-2e1cefce76539e232699b07e76fa2afa097f9d423aafe989574c694d2d25c8223</originalsourceid><addsrcrecordid>eNpVkMtuwjAURN2XVEr5gKob_4CpfeMHXtKotEhUSH2skRPfEFchQY4B8fdFKpuuZo6ONIsh5EHwsRDcPn3M5vkY-AmVNCbT-oKMrJkICVJqkCAuyQAyoxi3Vl39c9xck4FQYBkoYW7JXd__cM6N0HZA6inN35ef9BA8ssK1_lRSTeuwrtm2O2CkTWjRRRZa5p_p3sXgigapSwnbnUtdpLs-tGtadP5I912T3BqpD32Kodil0LV0g6nu_D25qVzT4-icQ_I9e_nK39hi-TrPpwsWhFGJAYoSqxKNVplFyEBbW3Bz4sqBqxy3prJeQuZchXZilZGlttKDB1VOALIhefzbDYi42sawcfG4Op-W_QI-a1zz</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A CMOS wide-bandwidth high-power linear-in-dB variable attenuator using body voltage distribution method</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Yan-Yu Huang ; Wangmyong Woo ; Chang-Ho Lee ; Laskar, Joy</creator><creatorcontrib>Yan-Yu Huang ; Wangmyong Woo ; Chang-Ho Lee ; Laskar, Joy</creatorcontrib><description>A wide bandwidth, highly linear variable attenuator designed in 0.18 μm triple-well CMOS process is presented. This attenuator is based on three cascade π-networks with body voltage distribution scheme to minimize the effects of the input power levels. Measurements show it achieves minimum 1-dB gain compression of 7.5 dBm. The mid-band insertion loss is 1.6 dB and the maximum attenuation is 34.8 dB. This attenuator has a linear-in-dB controllability from 400 MHz to 3.7 GHz with input return loss better than 9 dB. To our knowledge, this is the highest linear CMOS variable attenuator with a wide bandwidth of 3.3 GHz.</description><identifier>ISSN: 1529-2517</identifier><identifier>ISBN: 9781424462407</identifier><identifier>ISBN: 1424462401</identifier><identifier>EISSN: 2375-0995</identifier><identifier>EISBN: 9781424462421</identifier><identifier>EISBN: 1424462436</identifier><identifier>EISBN: 9781424462438</identifier><identifier>EISBN: 1424462428</identifier><identifier>DOI: 10.1109/RFIC.2010.5477366</identifier><language>eng</language><publisher>IEEE</publisher><subject>Attenuation ; attenuator ; Attenuators ; Bandwidth ; body voltage swing distribution ; body-floating technique ; Circuits ; CMOS ; CMOS process ; CMOS technology ; Impedance ; linear-in-dB ; Linearity ; Resistors ; Voltage</subject><ispartof>2010 IEEE Radio Frequency Integrated Circuits Symposium, 2010, p.303-306</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5477366$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5477366$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yan-Yu Huang</creatorcontrib><creatorcontrib>Wangmyong Woo</creatorcontrib><creatorcontrib>Chang-Ho Lee</creatorcontrib><creatorcontrib>Laskar, Joy</creatorcontrib><title>A CMOS wide-bandwidth high-power linear-in-dB variable attenuator using body voltage distribution method</title><title>2010 IEEE Radio Frequency Integrated Circuits Symposium</title><addtitle>RFIC</addtitle><description>A wide bandwidth, highly linear variable attenuator designed in 0.18 μm triple-well CMOS process is presented. This attenuator is based on three cascade π-networks with body voltage distribution scheme to minimize the effects of the input power levels. Measurements show it achieves minimum 1-dB gain compression of 7.5 dBm. The mid-band insertion loss is 1.6 dB and the maximum attenuation is 34.8 dB. This attenuator has a linear-in-dB controllability from 400 MHz to 3.7 GHz with input return loss better than 9 dB. To our knowledge, this is the highest linear CMOS variable attenuator with a wide bandwidth of 3.3 GHz.</description><subject>Attenuation</subject><subject>attenuator</subject><subject>Attenuators</subject><subject>Bandwidth</subject><subject>body voltage swing distribution</subject><subject>body-floating technique</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Impedance</subject><subject>linear-in-dB</subject><subject>Linearity</subject><subject>Resistors</subject><subject>Voltage</subject><issn>1529-2517</issn><issn>2375-0995</issn><isbn>9781424462407</isbn><isbn>1424462401</isbn><isbn>9781424462421</isbn><isbn>1424462436</isbn><isbn>9781424462438</isbn><isbn>1424462428</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkMtuwjAURN2XVEr5gKob_4CpfeMHXtKotEhUSH2skRPfEFchQY4B8fdFKpuuZo6ONIsh5EHwsRDcPn3M5vkY-AmVNCbT-oKMrJkICVJqkCAuyQAyoxi3Vl39c9xck4FQYBkoYW7JXd__cM6N0HZA6inN35ef9BA8ssK1_lRSTeuwrtm2O2CkTWjRRRZa5p_p3sXgigapSwnbnUtdpLs-tGtadP5I912T3BqpD32Kodil0LV0g6nu_D25qVzT4-icQ_I9e_nK39hi-TrPpwsWhFGJAYoSqxKNVplFyEBbW3Bz4sqBqxy3prJeQuZchXZilZGlttKDB1VOALIhefzbDYi42sawcfG4Op-W_QI-a1zz</recordid><startdate>201005</startdate><enddate>201005</enddate><creator>Yan-Yu Huang</creator><creator>Wangmyong Woo</creator><creator>Chang-Ho Lee</creator><creator>Laskar, Joy</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201005</creationdate><title>A CMOS wide-bandwidth high-power linear-in-dB variable attenuator using body voltage distribution method</title><author>Yan-Yu Huang ; Wangmyong Woo ; Chang-Ho Lee ; Laskar, Joy</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-2e1cefce76539e232699b07e76fa2afa097f9d423aafe989574c694d2d25c8223</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Attenuation</topic><topic>attenuator</topic><topic>Attenuators</topic><topic>Bandwidth</topic><topic>body voltage swing distribution</topic><topic>body-floating technique</topic><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Impedance</topic><topic>linear-in-dB</topic><topic>Linearity</topic><topic>Resistors</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Yan-Yu Huang</creatorcontrib><creatorcontrib>Wangmyong Woo</creatorcontrib><creatorcontrib>Chang-Ho Lee</creatorcontrib><creatorcontrib>Laskar, Joy</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yan-Yu Huang</au><au>Wangmyong Woo</au><au>Chang-Ho Lee</au><au>Laskar, Joy</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A CMOS wide-bandwidth high-power linear-in-dB variable attenuator using body voltage distribution method</atitle><btitle>2010 IEEE Radio Frequency Integrated Circuits Symposium</btitle><stitle>RFIC</stitle><date>2010-05</date><risdate>2010</risdate><spage>303</spage><epage>306</epage><pages>303-306</pages><issn>1529-2517</issn><eissn>2375-0995</eissn><isbn>9781424462407</isbn><isbn>1424462401</isbn><eisbn>9781424462421</eisbn><eisbn>1424462436</eisbn><eisbn>9781424462438</eisbn><eisbn>1424462428</eisbn><abstract>A wide bandwidth, highly linear variable attenuator designed in 0.18 μm triple-well CMOS process is presented. This attenuator is based on three cascade π-networks with body voltage distribution scheme to minimize the effects of the input power levels. Measurements show it achieves minimum 1-dB gain compression of 7.5 dBm. The mid-band insertion loss is 1.6 dB and the maximum attenuation is 34.8 dB. This attenuator has a linear-in-dB controllability from 400 MHz to 3.7 GHz with input return loss better than 9 dB. To our knowledge, this is the highest linear CMOS variable attenuator with a wide bandwidth of 3.3 GHz.</abstract><pub>IEEE</pub><doi>10.1109/RFIC.2010.5477366</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2010 IEEE Radio Frequency Integrated Circuits Symposium, 2010, p.303-306 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Attenuation attenuator Attenuators Bandwidth body voltage swing distribution body-floating technique Circuits CMOS CMOS process CMOS technology Impedance linear-in-dB Linearity Resistors Voltage |
| title | A CMOS wide-bandwidth high-power linear-in-dB variable attenuator using body voltage distribution method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T12%3A37%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20CMOS%20wide-bandwidth%20high-power%20linear-in-dB%20variable%20attenuator%20using%20body%20voltage%20distribution%20method&rft.btitle=2010%20IEEE%20Radio%20Frequency%20Integrated%20Circuits%20Symposium&rft.au=Yan-Yu%20Huang&rft.date=2010-05&rft.spage=303&rft.epage=306&rft.pages=303-306&rft.issn=1529-2517&rft.eissn=2375-0995&rft.isbn=9781424462407&rft.isbn_list=1424462401&rft_id=info:doi/10.1109/RFIC.2010.5477366&rft_dat=%3Cieee_6IE%3E5477366%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424462421&rft.eisbn_list=1424462436&rft.eisbn_list=9781424462438&rft.eisbn_list=1424462428&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5477366&rfr_iscdi=true |