Evaluation by spectroscopic ellipsometryof Si amorphized layer thickness after implantation and solid phase re-growth at low annealing temperatures

We have applied spectroscopic ellipsometry (SE) to measure amorphized layer thickness after implantation and solid phase re-growth at low annealing temperatures as a non-destructive, in line implant monitoring technique. The SE measurement treats the heavily damaged layer as a part of the amorphized...

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Bibliographische Detailangaben

Hauptverfasser:	Shibata, S, Kawase, F, Kitada, A, Kouzaki, T, Kitamura, A, Yamazawa, K, Arai, M, Nambu, Y, Izutani, H, Morita, T
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amorphous materials Annealing Ellipsometry Ion implantation Phase measurement Plasma temperature Solids Spectroscopy Temperature sensors Thickness measurement
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