Improved electrochemical etching for the formation of 3D p-n junction
3D p-n junction is a new kind of detector, also suggested as energy conversion device which can be adopted in high energy physics, clean energy power source and material test. The electrochemical etching process utilizing anodization has been described as a recommendable method to fabricate 3D struc...
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| creator | Jing Shi Pengliang Ci Fei Wang Huayan Zhang Lianwei Wang |
| description | 3D p-n junction is a new kind of detector, also suggested as energy conversion device which can be adopted in high energy physics, clean energy power source and material test. The electrochemical etching process utilizing anodization has been described as a recommendable method to fabricate 3D structure for p-n junction. However, the thickness of sidewall between two adjacent pores in the structure is usually too thin for p-type silicon to accord with technological requirement of following diffusion. In this report, pulse current was employed to manufacture satisfactory microstructure p-type silicon with thick sidewall. The 3D p-n junction based on this novel structure is promising for application in photovoltaic energy conversion and detection. |
| doi_str_mv | 10.1109/IWJT.2010.5474908 |
| format | Conference Proceeding |
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The electrochemical etching process utilizing anodization has been described as a recommendable method to fabricate 3D structure for p-n junction. However, the thickness of sidewall between two adjacent pores in the structure is usually too thin for p-type silicon to accord with technological requirement of following diffusion. In this report, pulse current was employed to manufacture satisfactory microstructure p-type silicon with thick sidewall. The 3D p-n junction based on this novel structure is promising for application in photovoltaic energy conversion and detection.</description><identifier>ISBN: 1424458668</identifier><identifier>ISBN: 9781424458660</identifier><identifier>EISBN: 1424458692</identifier><identifier>EISBN: 9781424458684</identifier><identifier>EISBN: 9781424458691</identifier><identifier>EISBN: 1424458684</identifier><identifier>DOI: 10.1109/IWJT.2010.5474908</identifier><language>eng</language><publisher>IEEE</publisher><subject>Detectors ; Energy conversion ; Etching ; Manufacturing ; Materials testing ; Microstructure ; P-n junctions ; Photovoltaic systems ; Silicon ; Solar power generation</subject><ispartof>2010 International Workshop on Junction Technology Extended Abstracts, 2010, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5474908$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5474908$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jing Shi</creatorcontrib><creatorcontrib>Pengliang Ci</creatorcontrib><creatorcontrib>Fei Wang</creatorcontrib><creatorcontrib>Huayan Zhang</creatorcontrib><creatorcontrib>Lianwei Wang</creatorcontrib><title>Improved electrochemical etching for the formation of 3D p-n junction</title><title>2010 International Workshop on Junction Technology Extended Abstracts</title><addtitle>IWJT</addtitle><description>3D p-n junction is a new kind of detector, also suggested as energy conversion device which can be adopted in high energy physics, clean energy power source and material test. 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The 3D p-n junction based on this novel structure is promising for application in photovoltaic energy conversion and detection.</description><subject>Detectors</subject><subject>Energy conversion</subject><subject>Etching</subject><subject>Manufacturing</subject><subject>Materials testing</subject><subject>Microstructure</subject><subject>P-n junctions</subject><subject>Photovoltaic systems</subject><subject>Silicon</subject><subject>Solar power generation</subject><isbn>1424458668</isbn><isbn>9781424458660</isbn><isbn>1424458692</isbn><isbn>9781424458684</isbn><isbn>9781424458691</isbn><isbn>1424458684</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFT01Lw0AUXBFBrf0B4mX_QOruy9tk9yi1aqTgJeCxrK9vzZZ8kUTBf2-KBecyzAwMM0LcarXSWrn74v21XIGapcEcnbJn4lojIBqbOTj_F5m9FMtxPKgZaEAreyU2RdMP3TfvJddM09BRxU0kX0ueqIrtpwzdIKeKj9z4KXat7IJMH2WftPLw1dLRuhEXwdcjL0-8EOXTply_JNu352L9sE2iU1OiyQFZsDnA3rsUyWgPqMkj6MApGYYPAFJBYT4vhMAW5zgPeaaMBpsuxN1fbWTmXT_Exg8_u9Pr9Bc9MEoH</recordid><startdate>201005</startdate><enddate>201005</enddate><creator>Jing Shi</creator><creator>Pengliang Ci</creator><creator>Fei Wang</creator><creator>Huayan Zhang</creator><creator>Lianwei Wang</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201005</creationdate><title>Improved electrochemical etching for the formation of 3D p-n junction</title><author>Jing Shi ; Pengliang Ci ; Fei Wang ; Huayan Zhang ; Lianwei Wang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-1c92c828722da934c51a241ca421fe3c5e2b22c0f0470042fe8441c7f76051283</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Detectors</topic><topic>Energy conversion</topic><topic>Etching</topic><topic>Manufacturing</topic><topic>Materials testing</topic><topic>Microstructure</topic><topic>P-n junctions</topic><topic>Photovoltaic systems</topic><topic>Silicon</topic><topic>Solar power generation</topic><toplevel>online_resources</toplevel><creatorcontrib>Jing Shi</creatorcontrib><creatorcontrib>Pengliang Ci</creatorcontrib><creatorcontrib>Fei Wang</creatorcontrib><creatorcontrib>Huayan Zhang</creatorcontrib><creatorcontrib>Lianwei Wang</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jing Shi</au><au>Pengliang Ci</au><au>Fei Wang</au><au>Huayan Zhang</au><au>Lianwei Wang</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Improved electrochemical etching for the formation of 3D p-n junction</atitle><btitle>2010 International Workshop on Junction Technology Extended Abstracts</btitle><stitle>IWJT</stitle><date>2010-05</date><risdate>2010</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><isbn>1424458668</isbn><isbn>9781424458660</isbn><eisbn>1424458692</eisbn><eisbn>9781424458684</eisbn><eisbn>9781424458691</eisbn><eisbn>1424458684</eisbn><abstract>3D p-n junction is a new kind of detector, also suggested as energy conversion device which can be adopted in high energy physics, clean energy power source and material test. The electrochemical etching process utilizing anodization has been described as a recommendable method to fabricate 3D structure for p-n junction. However, the thickness of sidewall between two adjacent pores in the structure is usually too thin for p-type silicon to accord with technological requirement of following diffusion. In this report, pulse current was employed to manufacture satisfactory microstructure p-type silicon with thick sidewall. The 3D p-n junction based on this novel structure is promising for application in photovoltaic energy conversion and detection.</abstract><pub>IEEE</pub><doi>10.1109/IWJT.2010.5474908</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2010 International Workshop on Junction Technology Extended Abstracts, 2010, p.1-4 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Detectors Energy conversion Etching Manufacturing Materials testing Microstructure P-n junctions Photovoltaic systems Silicon Solar power generation |
| title | Improved electrochemical etching for the formation of 3D p-n junction |
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