On-chip in-situ measurements of Vth and AC gain of differential pair transistors
In-situ DC measurements of individual transistors in a differential pair of an analog amplifier derive threshold voltage, V th , of 1.0-V transistors in a 90-nm CMOS technology. On-chip continuous time waveform monitoring is used to evaluate AC response of the same amplifier. The distribution of AC...
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| creator | Bando, Yoji Takaya, Satoshi Ohkawa, Toru Takaramoto, Toshiharu Yamada, Toshio Souda, Masaaki Kumashiro, Shigetaka Nagata, Makoto |
| description | In-situ DC measurements of individual transistors in a differential pair of an analog amplifier derive threshold voltage, V th , of 1.0-V transistors in a 90-nm CMOS technology. On-chip continuous time waveform monitoring is used to evaluate AC response of the same amplifier. The distribution of AC gain versus V th of transistors within amplifiers is captured. The degradation of common-mode rejection property is observed for an amplifier with intentionally introduced mismatches to the pair of transistors. |
| doi_str_mv | 10.1109/ICMTS.2010.5466809 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5466809</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5466809</ieee_id><sourcerecordid>5466809</sourcerecordid><originalsourceid>FETCH-LOGICAL-i156t-81dc89a16f708fe2f3d08f75ea61e0ca291fae3b9bd346891e23a5fc6af758dc3</originalsourceid><addsrcrecordid>eNpFUMtOAjEUra9ERH5AN_2BYm_b6bRLMhElwWAiuiWXmVupgYG0w8K_d4wkns3JeeQsDmN3IMcA0j_Mqpfl21jJXhfGWif9GbsBo4yxHkx5zgYKCidAKn_xHyh5yQYgSxBeanXNRjl_yR6mUODcgL0uWlFv4oHHVuTYHfmOMB8T7ajtMt8H_tFtOLYNn1T8E2P7azUxBEp9IeKWHzAm3iVsc8zdPuVbdhVwm2l04iF7nz4uq2cxXzzNqslcRChsJxw0tfMINpTSBVJBNz2XBaEFkjUqDwFJr_260cY6D6Q0FqG22JdcU-shu__bjUS0OqS4w_S9Oj2jfwAvFFPn</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>On-chip in-situ measurements of Vth and AC gain of differential pair transistors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Bando, Yoji ; Takaya, Satoshi ; Ohkawa, Toru ; Takaramoto, Toshiharu ; Yamada, Toshio ; Souda, Masaaki ; Kumashiro, Shigetaka ; Nagata, Makoto</creator><creatorcontrib>Bando, Yoji ; Takaya, Satoshi ; Ohkawa, Toru ; Takaramoto, Toshiharu ; Yamada, Toshio ; Souda, Masaaki ; Kumashiro, Shigetaka ; Nagata, Makoto</creatorcontrib><description>In-situ DC measurements of individual transistors in a differential pair of an analog amplifier derive threshold voltage, V th , of 1.0-V transistors in a 90-nm CMOS technology. On-chip continuous time waveform monitoring is used to evaluate AC response of the same amplifier. The distribution of AC gain versus V th of transistors within amplifiers is captured. The degradation of common-mode rejection property is observed for an amplifier with intentionally introduced mismatches to the pair of transistors.</description><identifier>ISSN: 1071-9032</identifier><identifier>ISBN: 1424469120</identifier><identifier>ISBN: 9781424469123</identifier><identifier>EISSN: 2158-1029</identifier><identifier>EISBN: 1424469147</identifier><identifier>EISBN: 9781424469154</identifier><identifier>EISBN: 1424469155</identifier><identifier>EISBN: 9781424469147</identifier><identifier>DOI: 10.1109/ICMTS.2010.5466809</identifier><language>eng ; jpn</language><publisher>IEEE</publisher><subject>Analog circuits ; CMOS technology ; Differential amplifiers ; Gain measurement ; MOSFETs ; Operational amplifiers ; Semiconductor device measurement ; Switches ; Threshold voltage ; Transistors</subject><ispartof>2010 International Conference on Microelectronic Test Structures (ICMTS), 2010, p.232-235</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5466809$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5466809$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bando, Yoji</creatorcontrib><creatorcontrib>Takaya, Satoshi</creatorcontrib><creatorcontrib>Ohkawa, Toru</creatorcontrib><creatorcontrib>Takaramoto, Toshiharu</creatorcontrib><creatorcontrib>Yamada, Toshio</creatorcontrib><creatorcontrib>Souda, Masaaki</creatorcontrib><creatorcontrib>Kumashiro, Shigetaka</creatorcontrib><creatorcontrib>Nagata, Makoto</creatorcontrib><title>On-chip in-situ measurements of Vth and AC gain of differential pair transistors</title><title>2010 International Conference on Microelectronic Test Structures (ICMTS)</title><addtitle>ICMTS</addtitle><description>In-situ DC measurements of individual transistors in a differential pair of an analog amplifier derive threshold voltage, V th , of 1.0-V transistors in a 90-nm CMOS technology. On-chip continuous time waveform monitoring is used to evaluate AC response of the same amplifier. The distribution of AC gain versus V th of transistors within amplifiers is captured. The degradation of common-mode rejection property is observed for an amplifier with intentionally introduced mismatches to the pair of transistors.</description><subject>Analog circuits</subject><subject>CMOS technology</subject><subject>Differential amplifiers</subject><subject>Gain measurement</subject><subject>MOSFETs</subject><subject>Operational amplifiers</subject><subject>Semiconductor device measurement</subject><subject>Switches</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>1071-9032</issn><issn>2158-1029</issn><isbn>1424469120</isbn><isbn>9781424469123</isbn><isbn>1424469147</isbn><isbn>9781424469154</isbn><isbn>1424469155</isbn><isbn>9781424469147</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUMtOAjEUra9ERH5AN_2BYm_b6bRLMhElwWAiuiWXmVupgYG0w8K_d4wkns3JeeQsDmN3IMcA0j_Mqpfl21jJXhfGWif9GbsBo4yxHkx5zgYKCidAKn_xHyh5yQYgSxBeanXNRjl_yR6mUODcgL0uWlFv4oHHVuTYHfmOMB8T7ajtMt8H_tFtOLYNn1T8E2P7azUxBEp9IeKWHzAm3iVsc8zdPuVbdhVwm2l04iF7nz4uq2cxXzzNqslcRChsJxw0tfMINpTSBVJBNz2XBaEFkjUqDwFJr_260cY6D6Q0FqG22JdcU-shu__bjUS0OqS4w_S9Oj2jfwAvFFPn</recordid><startdate>201003</startdate><enddate>201003</enddate><creator>Bando, Yoji</creator><creator>Takaya, Satoshi</creator><creator>Ohkawa, Toru</creator><creator>Takaramoto, Toshiharu</creator><creator>Yamada, Toshio</creator><creator>Souda, Masaaki</creator><creator>Kumashiro, Shigetaka</creator><creator>Nagata, Makoto</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201003</creationdate><title>On-chip in-situ measurements of Vth and AC gain of differential pair transistors</title><author>Bando, Yoji ; Takaya, Satoshi ; Ohkawa, Toru ; Takaramoto, Toshiharu ; Yamada, Toshio ; Souda, Masaaki ; Kumashiro, Shigetaka ; Nagata, Makoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i156t-81dc89a16f708fe2f3d08f75ea61e0ca291fae3b9bd346891e23a5fc6af758dc3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng ; jpn</language><creationdate>2010</creationdate><topic>Analog circuits</topic><topic>CMOS technology</topic><topic>Differential amplifiers</topic><topic>Gain measurement</topic><topic>MOSFETs</topic><topic>Operational amplifiers</topic><topic>Semiconductor device measurement</topic><topic>Switches</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Bando, Yoji</creatorcontrib><creatorcontrib>Takaya, Satoshi</creatorcontrib><creatorcontrib>Ohkawa, Toru</creatorcontrib><creatorcontrib>Takaramoto, Toshiharu</creatorcontrib><creatorcontrib>Yamada, Toshio</creatorcontrib><creatorcontrib>Souda, Masaaki</creatorcontrib><creatorcontrib>Kumashiro, Shigetaka</creatorcontrib><creatorcontrib>Nagata, Makoto</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bando, Yoji</au><au>Takaya, Satoshi</au><au>Ohkawa, Toru</au><au>Takaramoto, Toshiharu</au><au>Yamada, Toshio</au><au>Souda, Masaaki</au><au>Kumashiro, Shigetaka</au><au>Nagata, Makoto</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>On-chip in-situ measurements of Vth and AC gain of differential pair transistors</atitle><btitle>2010 International Conference on Microelectronic Test Structures (ICMTS)</btitle><stitle>ICMTS</stitle><date>2010-03</date><risdate>2010</risdate><spage>232</spage><epage>235</epage><pages>232-235</pages><issn>1071-9032</issn><eissn>2158-1029</eissn><isbn>1424469120</isbn><isbn>9781424469123</isbn><eisbn>1424469147</eisbn><eisbn>9781424469154</eisbn><eisbn>1424469155</eisbn><eisbn>9781424469147</eisbn><abstract>In-situ DC measurements of individual transistors in a differential pair of an analog amplifier derive threshold voltage, V th , of 1.0-V transistors in a 90-nm CMOS technology. On-chip continuous time waveform monitoring is used to evaluate AC response of the same amplifier. The distribution of AC gain versus V th of transistors within amplifiers is captured. The degradation of common-mode rejection property is observed for an amplifier with intentionally introduced mismatches to the pair of transistors.</abstract><pub>IEEE</pub><doi>10.1109/ICMTS.2010.5466809</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1071-9032 |
| ispartof | 2010 International Conference on Microelectronic Test Structures (ICMTS), 2010, p.232-235 |
| issn | 1071-9032 2158-1029 |
| language | eng ; jpn |
| recordid | cdi_ieee_primary_5466809 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Analog circuits CMOS technology Differential amplifiers Gain measurement MOSFETs Operational amplifiers Semiconductor device measurement Switches Threshold voltage Transistors |
| title | On-chip in-situ measurements of Vth and AC gain of differential pair transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T06%3A18%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=On-chip%20in-situ%20measurements%20of%20Vth%20and%20AC%20gain%20of%20differential%20pair%20transistors&rft.btitle=2010%20International%20Conference%20on%20Microelectronic%20Test%20Structures%20(ICMTS)&rft.au=Bando,%20Yoji&rft.date=2010-03&rft.spage=232&rft.epage=235&rft.pages=232-235&rft.issn=1071-9032&rft.eissn=2158-1029&rft.isbn=1424469120&rft.isbn_list=9781424469123&rft_id=info:doi/10.1109/ICMTS.2010.5466809&rft_dat=%3Cieee_6IE%3E5466809%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424469147&rft.eisbn_list=9781424469154&rft.eisbn_list=1424469155&rft.eisbn_list=9781424469147&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5466809&rfr_iscdi=true |