hbox/f Noise of Silicon Nanowire BioFETs
The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are sh...
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| Veröffentlicht in: | IEEE electron device letters 2010-06, Vol.31 (6), p.615-617 |
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| container_end_page | 617 |
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| container_title | IEEE electron device letters |
| container_volume | 31 |
| creator | Rajan, Nitin K Routenberg, David A Jin Chen Reed, Mark A |
| description | The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various fabrication approaches, specifically, a wet orientation-dependent etch (ODE) versus common plasma-based etching methods. The wet-etched devices are shown to have significantly lower noise and subthreshold swing, and the average extracted Hooge parameter for ODE wet-etched devices (α H = 2.1 × 10 -3 ) is comparable to the values reported for submicrometer MOSFETs with a metal/HfO 2 gate stack. |
| doi_str_mv | 10.1109/LED.2010.2047000 |
| format | Article |
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| source | IEEE Electronic Library (IEL) |
| subjects | Biosensors Chemical and biological sensors Etching FETs low-frequency noise (LFN) MOSFET Nanobioscience nanowire (NW) Plasma applications Plasma devices Plasma properties Plasma sources Silicon Wet etching |
| title | hbox/f Noise of Silicon Nanowire BioFETs |
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