Studies on Mn2+ doped ZnS nanocrystals for photonic crystals application
Mn doped ZnS is a semiconductor that can exhibit good quality in their properties due to the wider band gap. In this present work, sol gel method with self assembled technique were used to perform a good quality of ZnS:Mn nanocrystals layer depend on the different of doping concentration. The nanocr...
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| creator | Ab-Rahman, Mohammad Syuhaimi Arif, Noor Azie Azura Mohd Shaari, Sahbudin |
| description | Mn doped ZnS is a semiconductor that can exhibit good quality in their properties due to the wider band gap. In this present work, sol gel method with self assembled technique were used to perform a good quality of ZnS:Mn nanocrystals layer depend on the different of doping concentration. The nanocrystals of the prepared Mn doped ZnS have been analyzed using Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence (PL) and UV-Vis spectrophotometer. The appearance of the nanocrystals from FESEM micrograph was smooth and homogenous with the average size was measured around 25 nm. From the measurements of transmittance of the films, the bandgap increases with the increase of Mn concentration same as the PL performance. Based on these properties that were obtained from nanocrystals layer, it is suitable and has tendency to use in photonic crystals applications. |
| doi_str_mv | 10.1109/SCORED.2009.5442940 |
| format | Conference Proceeding |
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In this present work, sol gel method with self assembled technique were used to perform a good quality of ZnS:Mn nanocrystals layer depend on the different of doping concentration. The nanocrystals of the prepared Mn doped ZnS have been analyzed using Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence (PL) and UV-Vis spectrophotometer. The appearance of the nanocrystals from FESEM micrograph was smooth and homogenous with the average size was measured around 25 nm. From the measurements of transmittance of the films, the bandgap increases with the increase of Mn concentration same as the PL performance. Based on these properties that were obtained from nanocrystals layer, it is suitable and has tendency to use in photonic crystals applications.</description><identifier>ISBN: 9781424451869</identifier><identifier>ISBN: 1424451868</identifier><identifier>EISBN: 1424451876</identifier><identifier>EISBN: 9781424451876</identifier><identifier>DOI: 10.1109/SCORED.2009.5442940</identifier><identifier>LCCN: 2009934343</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electron emission ; Nanocrystals ; Photoluminescence ; Photonic band gap ; Photonic crystals ; Scanning electron microscopy ; Self assembly ; Semiconductor device doping ; Size measurement ; Sol gel ; Zinc compounds ; ZnS:Mn</subject><ispartof>2009 IEEE Student Conference on Research and Development (SCOReD), 2009, p.540-542</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5442940$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5442940$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ab-Rahman, Mohammad Syuhaimi</creatorcontrib><creatorcontrib>Arif, Noor Azie Azura Mohd</creatorcontrib><creatorcontrib>Shaari, Sahbudin</creatorcontrib><title>Studies on Mn2+ doped ZnS nanocrystals for photonic crystals application</title><title>2009 IEEE Student Conference on Research and Development (SCOReD)</title><addtitle>SCORED</addtitle><description>Mn doped ZnS is a semiconductor that can exhibit good quality in their properties due to the wider band gap. In this present work, sol gel method with self assembled technique were used to perform a good quality of ZnS:Mn nanocrystals layer depend on the different of doping concentration. The nanocrystals of the prepared Mn doped ZnS have been analyzed using Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence (PL) and UV-Vis spectrophotometer. The appearance of the nanocrystals from FESEM micrograph was smooth and homogenous with the average size was measured around 25 nm. From the measurements of transmittance of the films, the bandgap increases with the increase of Mn concentration same as the PL performance. Based on these properties that were obtained from nanocrystals layer, it is suitable and has tendency to use in photonic crystals applications.</description><subject>Electron emission</subject><subject>Nanocrystals</subject><subject>Photoluminescence</subject><subject>Photonic band gap</subject><subject>Photonic crystals</subject><subject>Scanning electron microscopy</subject><subject>Self assembly</subject><subject>Semiconductor device doping</subject><subject>Size measurement</subject><subject>Sol gel</subject><subject>Zinc compounds</subject><subject>ZnS:Mn</subject><isbn>9781424451869</isbn><isbn>1424451868</isbn><isbn>1424451876</isbn><isbn>9781424451876</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9UE1Lw0AUXJGCtuYX9LJ3SdyPt0n2KLFaoVIwevFSXrIvuFJ3QxIP_fdWrM4chhmGOQxjSykyKYW9qavt8-ouU0LYzAAoC-KMzSUoACPLIj9niS3KP5_bGZv_dK2GIy9YMo4f4ggwylq4ZOt6-nKeRh4DfwrqmrvYk-NvoeYBQ2yHwzjhfuRdHHj_HqcYfMv_U-z7vW9x8jFcsVl3jCg56YK93q9eqnW62T48Vreb1EthppSMsSA1lqQa3SkBLaIulRWFM01TAJm8kC1phKLLUeSdQ5IIWjtLSKXRC7b83fVEtOsH_4nDYXd6Qn8DgwRQTQ</recordid><startdate>200911</startdate><enddate>200911</enddate><creator>Ab-Rahman, Mohammad Syuhaimi</creator><creator>Arif, Noor Azie Azura Mohd</creator><creator>Shaari, Sahbudin</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200911</creationdate><title>Studies on Mn2+ doped ZnS nanocrystals for photonic crystals application</title><author>Ab-Rahman, Mohammad Syuhaimi ; Arif, Noor Azie Azura Mohd ; Shaari, Sahbudin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-e559413a8e2b3f204caa382907d5bb74e5671ce3a47f6a06fdae1a433d9eae853</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Electron emission</topic><topic>Nanocrystals</topic><topic>Photoluminescence</topic><topic>Photonic band gap</topic><topic>Photonic crystals</topic><topic>Scanning electron microscopy</topic><topic>Self assembly</topic><topic>Semiconductor device doping</topic><topic>Size measurement</topic><topic>Sol gel</topic><topic>Zinc compounds</topic><topic>ZnS:Mn</topic><toplevel>online_resources</toplevel><creatorcontrib>Ab-Rahman, Mohammad Syuhaimi</creatorcontrib><creatorcontrib>Arif, Noor Azie Azura Mohd</creatorcontrib><creatorcontrib>Shaari, Sahbudin</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ab-Rahman, Mohammad Syuhaimi</au><au>Arif, Noor Azie Azura Mohd</au><au>Shaari, Sahbudin</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Studies on Mn2+ doped ZnS nanocrystals for photonic crystals application</atitle><btitle>2009 IEEE Student Conference on Research and Development (SCOReD)</btitle><stitle>SCORED</stitle><date>2009-11</date><risdate>2009</risdate><spage>540</spage><epage>542</epage><pages>540-542</pages><isbn>9781424451869</isbn><isbn>1424451868</isbn><eisbn>1424451876</eisbn><eisbn>9781424451876</eisbn><abstract>Mn doped ZnS is a semiconductor that can exhibit good quality in their properties due to the wider band gap. In this present work, sol gel method with self assembled technique were used to perform a good quality of ZnS:Mn nanocrystals layer depend on the different of doping concentration. The nanocrystals of the prepared Mn doped ZnS have been analyzed using Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence (PL) and UV-Vis spectrophotometer. The appearance of the nanocrystals from FESEM micrograph was smooth and homogenous with the average size was measured around 25 nm. From the measurements of transmittance of the films, the bandgap increases with the increase of Mn concentration same as the PL performance. Based on these properties that were obtained from nanocrystals layer, it is suitable and has tendency to use in photonic crystals applications.</abstract><pub>IEEE</pub><doi>10.1109/SCORED.2009.5442940</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electron emission Nanocrystals Photoluminescence Photonic band gap Photonic crystals Scanning electron microscopy Self assembly Semiconductor device doping Size measurement Sol gel Zinc compounds ZnS:Mn |
| title | Studies on Mn2+ doped ZnS nanocrystals for photonic crystals application |
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