Simulation of a polysilicon LPCVD reactor Fluid-dynamics and Error Analysis

The deposition of polysilicon is numerically simulated with a model that computes the fluid flow, transport coefficients and surface chemistry inside the LPCVD reactor. The results exhibit relatively small gas recirculations as a result of the temperature gradients in the empty inlet area and in the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hopfmann, Ch, Ulacia F., J.I., Werner, Ch
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Chemistry Computational modeling Error analysis Fluid flow Heating Inductors Numerical simulation Semiconductor device modeling Temperature
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