Simulation of a polysilicon LPCVD reactor Fluid-dynamics and Error Analysis
The deposition of polysilicon is numerically simulated with a model that computes the fluid flow, transport coefficients and surface chemistry inside the LPCVD reactor. The results exhibit relatively small gas recirculations as a result of the temperature gradients in the empty inlet area and in the...
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| creator | Hopfmann, Ch Ulacia F., J.I. Werner, Ch |
| description | The deposition of polysilicon is numerically simulated with a model that computes the fluid flow, transport coefficients and surface chemistry inside the LPCVD reactor. The results exhibit relatively small gas recirculations as a result of the temperature gradients in the empty inlet area and in the heating zone. Comparing simulations with and without reactive surfaces, inter-wafer recirculations near non-reactive waferedges are eliminated at reactive wafer. A comparison of four deposition models and an error analysis leads to the conclusion, that no complex chemical models are necessary as long as the uncertainty of the activation energy is by far the largest source of error. |
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The results exhibit relatively small gas recirculations as a result of the temperature gradients in the empty inlet area and in the heating zone. Comparing simulations with and without reactive surfaces, inter-wafer recirculations near non-reactive waferedges are eliminated at reactive wafer. A comparison of four deposition models and an error analysis leads to the conclusion, that no complex chemical models are necessary as long as the uncertainty of the activation energy is by far the largest source of error.</description><identifier>ISBN: 9780750300650</identifier><identifier>ISBN: 0750300655</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Chemistry ; Computational modeling ; Error analysis ; Fluid flow ; Heating ; Inductors ; Numerical simulation ; Semiconductor device modeling ; Temperature</subject><ispartof>ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.213-216</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5436432$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,54899</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5436432$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hopfmann, Ch</creatorcontrib><creatorcontrib>Ulacia F., J.I.</creatorcontrib><creatorcontrib>Werner, Ch</creatorcontrib><title>Simulation of a polysilicon LPCVD reactor Fluid-dynamics and Error Analysis</title><title>ESSDERC '90: 20th European Solid State Device Research Conference</title><addtitle>ESSDERC</addtitle><description>The deposition of polysilicon is numerically simulated with a model that computes the fluid flow, transport coefficients and surface chemistry inside the LPCVD reactor. The results exhibit relatively small gas recirculations as a result of the temperature gradients in the empty inlet area and in the heating zone. Comparing simulations with and without reactive surfaces, inter-wafer recirculations near non-reactive waferedges are eliminated at reactive wafer. A comparison of four deposition models and an error analysis leads to the conclusion, that no complex chemical models are necessary as long as the uncertainty of the activation energy is by far the largest source of error.</description><subject>Analytical models</subject><subject>Chemistry</subject><subject>Computational modeling</subject><subject>Error analysis</subject><subject>Fluid flow</subject><subject>Heating</subject><subject>Inductors</subject><subject>Numerical simulation</subject><subject>Semiconductor device modeling</subject><subject>Temperature</subject><isbn>9780750300650</isbn><isbn>0750300655</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1990</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjNtKxDAYhAMiKGufwJu8QCGHP2lyudRdFQsKLt4ufw6FSA9L0r3o21vRuZnhG2ZuSGUbwxrFJGNasTtSlfLNNoHiwoh78vaZxuuAS5onOvcU6WUe1pKG5DfQfbRfTzRH9Muc6XG4plCHdcIx-UJxCvSQ81bsJ_zdlAdy2-NQYvXvO3I6Hk7tS929P7-2-65Oli119Ebw4Lx0GiCKCEE79NI33PbRCe0VNgjBRg3IOXc9N2zLDpS0CIbLHXn8u00xxvMlpxHzelYgNUghfwB5MUas</recordid><startdate>199009</startdate><enddate>199009</enddate><creator>Hopfmann, Ch</creator><creator>Ulacia F., J.I.</creator><creator>Werner, Ch</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>199009</creationdate><title>Simulation of a polysilicon LPCVD reactor Fluid-dynamics and Error Analysis</title><author>Hopfmann, Ch ; Ulacia F., J.I. ; Werner, Ch</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-ec821dbc3b644e2e4d6bac3c719feb26c5a7a4d9e64a111bf180e64b4539a4813</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Analytical models</topic><topic>Chemistry</topic><topic>Computational modeling</topic><topic>Error analysis</topic><topic>Fluid flow</topic><topic>Heating</topic><topic>Inductors</topic><topic>Numerical simulation</topic><topic>Semiconductor device modeling</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Hopfmann, Ch</creatorcontrib><creatorcontrib>Ulacia F., J.I.</creatorcontrib><creatorcontrib>Werner, Ch</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hopfmann, Ch</au><au>Ulacia F., J.I.</au><au>Werner, Ch</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Simulation of a polysilicon LPCVD reactor Fluid-dynamics and Error Analysis</atitle><btitle>ESSDERC '90: 20th European Solid State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>1990-09</date><risdate>1990</risdate><spage>213</spage><epage>216</epage><pages>213-216</pages><isbn>9780750300650</isbn><isbn>0750300655</isbn><abstract>The deposition of polysilicon is numerically simulated with a model that computes the fluid flow, transport coefficients and surface chemistry inside the LPCVD reactor. The results exhibit relatively small gas recirculations as a result of the temperature gradients in the empty inlet area and in the heating zone. Comparing simulations with and without reactive surfaces, inter-wafer recirculations near non-reactive waferedges are eliminated at reactive wafer. A comparison of four deposition models and an error analysis leads to the conclusion, that no complex chemical models are necessary as long as the uncertainty of the activation energy is by far the largest source of error.</abstract><pub>IEEE</pub><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9780750300650 |
| ispartof | ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.213-216 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Analytical models Chemistry Computational modeling Error analysis Fluid flow Heating Inductors Numerical simulation Semiconductor device modeling Temperature |
| title | Simulation of a polysilicon LPCVD reactor Fluid-dynamics and Error Analysis |
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