p-Type AuMn ohmic contact on GaAs: integration in a HBT processing technology

The influence of the p-type doping level in GaAs on the AuMn specific contact resistivity has been investigated, showing that AuMn could be used as an ohmic contact on epitaxial layers with a very large range of doping levels. The integration of this contact in the processing technology of heterojun...

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Bibliographische Detailangaben

Hauptverfasser:	Dubon-Chevallier, C., Duchenois, A.M., Papadopoulo, A.C., Bricard, L., Heliot, F., Launay, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bipolar integrated circuits Chemical technology Conductivity Doping Epitaxial layers Etching Gallium arsenide Heterojunction bipolar transistors Integrated circuit technology Ohmic contacts
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