Limitations of digital CMOS-processes for analog applications due to channel length modulation and hot carrier degradation

Limitations of digital CMOS-processes for analog applications due to channel length modulation and hot carrier degradation

As opposed to digital circuits, output resistance and stability of output current are vital parameters for the precision of analog circuits. Both the non-ideal shape of the output characteristics and degradation after hot carrier stress deteriorates these parameters. This paper discusses two example...

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Veröffentlicht in:ESSDERC '91: 21st European Solid State Device Research Conference 1991, Vol.15 (1), p.429-432
Hauptverfasser: Steimle, M., Mühloff, H.-H.
Format: Artikel
Sprache:eng
Schlagworte:
Analog circuits
Degradation
Digital circuits
Digital modulation
Hot carriers
Mirrors
MOS devices
MOSFETs
Stress
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Mühloff, H.-H.
description As opposed to digital circuits, output resistance and stability of output current are vital parameters for the precision of analog circuits. Both the non-ideal shape of the output characteristics and degradation after hot carrier stress deteriorates these parameters. This paper discusses two examples of how analog precision is impaired due to these effects. The accuracy of current mirrors is the first topic. The second topic is the hot carrier induced drift of offset voltage in differential amplifiers.
doi_str_mv 10.1016/0167-9317(91)90257-E
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identifier ISSN: 0167-9317
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1873-5568
language eng
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Analog circuits
Degradation
Digital circuits
Digital modulation
Hot carriers
Mirrors
MOS devices
MOSFETs
Stress
title Limitations of digital CMOS-processes for analog applications due to channel length modulation and hot carrier degradation
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