Controllable dυ/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications

Switching devices based on SiC offer outstanding performance with respect to operating frequency, junction temperature and conduction losses and enable a significant improvement of the system performance. There, the cascode consisting of a MOSFET and a JFET additionally has the advantage of being a...

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Bibliographische Detailangaben

Hauptverfasser:	Aggeler, D., Biela, J., Kolar, J.W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electromagnetic compatibility Frequency MOSFET circuits Performance loss Silicon carbide Switches System performance Telecommunication control Telecommunication switching Temperature
Online-Zugang:	Volltext bestellen
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