Controllable dυ/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications

Switching devices based on SiC offer outstanding performance with respect to operating frequency, junction temperature and conduction losses and enable a significant improvement of the system performance. There, the cascode consisting of a MOSFET and a JFET additionally has the advantage of being a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Aggeler, D., Biela, J., Kolar, J.W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electromagnetic compatibility Frequency MOSFET circuits Performance loss Silicon carbide Switches System performance Telecommunication control Telecommunication switching Temperature
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	1590
container_issue
container_start_page	1584
container_title
container_volume
creator	Aggeler, D. Biela, J. Kolar, J.W.
description	Switching devices based on SiC offer outstanding performance with respect to operating frequency, junction temperature and conduction losses and enable a significant improvement of the system performance. There, the cascode consisting of a MOSFET and a JFET additionally has the advantage of being a normally off device and offering a simple control via the gate of the MOSFET. Without dv/dt control, however, the transients with hard commutation reach values of up to 45 kV/¿s, which could lead to EMC problems and especially in drive systems to problems related to earth currents (bearing currents) due to parasitic capacitances. Therefore, new dv/dt control methods for the SiC MOSFET/JFET cascode as well as measurement results are presented in this paper. Based on this new concepts the outstanding performance of the SiC devices can be fully utilised without impairing EMC.
doi_str_mv	10.1109/APEC.2010.5433443
format	Conference Proceeding
fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5433443</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5433443</ieee_id><sourcerecordid>5433443</sourcerecordid><originalsourceid>FETCH-ieee_primary_54334433</originalsourceid><addsrcrecordid>eNp9j8tKxDAUhuNlwKrzAOLmvECnudm0SykjIojCuB8y7SmNpE1JMiPi2ufzlcxiNm7c_Ief7zsHDiE3jK4Yo3Vx_7puVpymeieFkFKckGWtKia5lFJVgp2SjEtF87KU6uwP4_KcZIzKKudpc0GyOllSlFRdkMsQ3inlQrEyI1-Nm6J31uqdReh-vosuwg4HfTBu78H1EAeEjWng-WXzsH4rnlJAq0PrOgQ9gbYR_aSjOSAM2nfQunHcRx2xg_BhYjtA7zxEtJgI6Hm2pk26m8I1WfTaBlwe5xW5Tcebx9wg4nb2ZtT-c3v8XfxPfwH2Q1aT</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Controllable dυ/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Aggeler, D. ; Biela, J. ; Kolar, J.W.</creator><creatorcontrib>Aggeler, D. ; Biela, J. ; Kolar, J.W.</creatorcontrib><description>Switching devices based on SiC offer outstanding performance with respect to operating frequency, junction temperature and conduction losses and enable a significant improvement of the system performance. There, the cascode consisting of a MOSFET and a JFET additionally has the advantage of being a normally off device and offering a simple control via the gate of the MOSFET. Without dv/dt control, however, the transients with hard commutation reach values of up to 45 kV/¿s, which could lead to EMC problems and especially in drive systems to problems related to earth currents (bearing currents) due to parasitic capacitances. Therefore, new dv/dt control methods for the SiC MOSFET/JFET cascode as well as measurement results are presented in this paper. Based on this new concepts the outstanding performance of the SiC devices can be fully utilised without impairing EMC.</description><identifier>ISSN: 1048-2334</identifier><identifier>ISBN: 9781424447824</identifier><identifier>ISBN: 1424447828</identifier><identifier>EISSN: 2470-6647</identifier><identifier>EISBN: 9781424447831</identifier><identifier>EISBN: 1424447836</identifier><identifier>DOI: 10.1109/APEC.2010.5433443</identifier><identifier>LCCN: 90-643607</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electromagnetic compatibility ; Frequency ; MOSFET circuits ; Performance loss ; Silicon carbide ; Switches ; System performance ; Telecommunication control ; Telecommunication switching ; Temperature</subject><ispartof>2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2010, p.1584-1590</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5433443$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5433443$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Aggeler, D.</creatorcontrib><creatorcontrib>Biela, J.</creatorcontrib><creatorcontrib>Kolar, J.W.</creatorcontrib><title>Controllable dυ/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications</title><title>2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)</title><addtitle>APEC</addtitle><description>Switching devices based on SiC offer outstanding performance with respect to operating frequency, junction temperature and conduction losses and enable a significant improvement of the system performance. There, the cascode consisting of a MOSFET and a JFET additionally has the advantage of being a normally off device and offering a simple control via the gate of the MOSFET. Without dv/dt control, however, the transients with hard commutation reach values of up to 45 kV/¿s, which could lead to EMC problems and especially in drive systems to problems related to earth currents (bearing currents) due to parasitic capacitances. Therefore, new dv/dt control methods for the SiC MOSFET/JFET cascode as well as measurement results are presented in this paper. Based on this new concepts the outstanding performance of the SiC devices can be fully utilised without impairing EMC.</description><subject>Electromagnetic compatibility</subject><subject>Frequency</subject><subject>MOSFET circuits</subject><subject>Performance loss</subject><subject>Silicon carbide</subject><subject>Switches</subject><subject>System performance</subject><subject>Telecommunication control</subject><subject>Telecommunication switching</subject><subject>Temperature</subject><issn>1048-2334</issn><issn>2470-6647</issn><isbn>9781424447824</isbn><isbn>1424447828</isbn><isbn>9781424447831</isbn><isbn>1424447836</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9j8tKxDAUhuNlwKrzAOLmvECnudm0SykjIojCuB8y7SmNpE1JMiPi2ufzlcxiNm7c_Ief7zsHDiE3jK4Yo3Vx_7puVpymeieFkFKckGWtKia5lFJVgp2SjEtF87KU6uwP4_KcZIzKKudpc0GyOllSlFRdkMsQ3inlQrEyI1-Nm6J31uqdReh-vosuwg4HfTBu78H1EAeEjWng-WXzsH4rnlJAq0PrOgQ9gbYR_aSjOSAM2nfQunHcRx2xg_BhYjtA7zxEtJgI6Hm2pk26m8I1WfTaBlwe5xW5Tcebx9wg4nb2ZtT-c3v8XfxPfwH2Q1aT</recordid><startdate>201002</startdate><enddate>201002</enddate><creator>Aggeler, D.</creator><creator>Biela, J.</creator><creator>Kolar, J.W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201002</creationdate><title>Controllable dυ/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications</title><author>Aggeler, D. ; Biela, J. ; Kolar, J.W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_54334433</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Electromagnetic compatibility</topic><topic>Frequency</topic><topic>MOSFET circuits</topic><topic>Performance loss</topic><topic>Silicon carbide</topic><topic>Switches</topic><topic>System performance</topic><topic>Telecommunication control</topic><topic>Telecommunication switching</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Aggeler, D.</creatorcontrib><creatorcontrib>Biela, J.</creatorcontrib><creatorcontrib>Kolar, J.W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Aggeler, D.</au><au>Biela, J.</au><au>Kolar, J.W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Controllable dυ/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications</atitle><btitle>2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)</btitle><stitle>APEC</stitle><date>2010-02</date><risdate>2010</risdate><spage>1584</spage><epage>1590</epage><pages>1584-1590</pages><issn>1048-2334</issn><eissn>2470-6647</eissn><isbn>9781424447824</isbn><isbn>1424447828</isbn><eisbn>9781424447831</eisbn><eisbn>1424447836</eisbn><abstract>Switching devices based on SiC offer outstanding performance with respect to operating frequency, junction temperature and conduction losses and enable a significant improvement of the system performance. There, the cascode consisting of a MOSFET and a JFET additionally has the advantage of being a normally off device and offering a simple control via the gate of the MOSFET. Without dv/dt control, however, the transients with hard commutation reach values of up to 45 kV/¿s, which could lead to EMC problems and especially in drive systems to problems related to earth currents (bearing currents) due to parasitic capacitances. Therefore, new dv/dt control methods for the SiC MOSFET/JFET cascode as well as measurement results are presented in this paper. Based on this new concepts the outstanding performance of the SiC devices can be fully utilised without impairing EMC.</abstract><pub>IEEE</pub><doi>10.1109/APEC.2010.5433443</doi></addata></record>
fulltext	fulltext_linktorsrc
identifier	ISSN: 1048-2334
ispartof	2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2010, p.1584-1590
issn	1048-2334 2470-6647
language	eng
recordid	cdi_ieee_primary_5433443
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Electromagnetic compatibility Frequency MOSFET circuits Performance loss Silicon carbide Switches System performance Telecommunication control Telecommunication switching Temperature
title	Controllable dυ/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T18%3A23%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Controllable%20d%CF%85/dt%20behaviour%20of%20the%20SiC%20MOSFET/JFET%20cascode%20an%20alternative%20hard%20commutated%20switch%20for%20telecom%20applications&rft.btitle=2010%20Twenty-Fifth%20Annual%20IEEE%20Applied%20Power%20Electronics%20Conference%20and%20Exposition%20(APEC)&rft.au=Aggeler,%20D.&rft.date=2010-02&rft.spage=1584&rft.epage=1590&rft.pages=1584-1590&rft.issn=1048-2334&rft.eissn=2470-6647&rft.isbn=9781424447824&rft.isbn_list=1424447828&rft_id=info:doi/10.1109/APEC.2010.5433443&rft_dat=%3Cieee_6IE%3E5433443%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424447831&rft.eisbn_list=1424447836&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5433443&rfr_iscdi=true